Growth and Ferroelectric Characterization of Cerium-Modified Bismuth Titanate Thin Film Deposited on GaN Substrate by Pulsed Laser Deposition

2004 ◽  
Vol 66 (1) ◽  
pp. 253-260
Author(s):  
JAE-YEOL HWANG ◽  
CHAE-RYONG CHO ◽  
SANG-A LEE ◽  
SE-YOUNG JEONG ◽  
SOON-GIL YOON
2006 ◽  
Vol 89 (18) ◽  
pp. 182906 ◽  
Author(s):  
Sang-A Lee ◽  
Jae-Yeol Hwang ◽  
Jong-Pil Kim ◽  
Se-Young Jeong ◽  
Chae-Ryong Cho

2000 ◽  
Vol 655 ◽  
Author(s):  
Masanori Okuyama ◽  
Toshiyuki Nakaiso ◽  
Minoru Noda

AbstractSr2(Ta1划x, Nbx)2O7(STN) ferroelectric thin films have been prepared on SiO2/Si(100) substrates by the pulsed laser deposition (PLD) method. Preferential (110) and (151)-oriented STN thin films are deposited at a low temperature of 600°C in N2O ambient gas at 0.08 Torr. A counterclockwise C-V hysteresis was observed in the metal-ferroelectric-insulator-semiconductor (MFIS) structure using Sr2(Ta0.7, Nb0.3)2O7 on SiO2/Si deposited at 600°C. Memory window in the C-V curve spreads symmetrically towards both positive and negative directions when applied voltage increases and the window does not change in sweep rates ranging from 0.1 to 4.0×103 V/s. The C-V curve of the MFIS structure does not degrade after 1010 cycles of polarization reversal. The gate retention time is about 3.0×103 sec when the voltages and time of write pulse are ±15V and 1.0 sec, respectively, and hold bias was -0.5 V.


2004 ◽  
Vol 453-454 ◽  
pp. 417-421 ◽  
Author(s):  
A. Roemer ◽  
A. Essahlaoui ◽  
O. Pons-Y-Moll ◽  
B. Vincent ◽  
R.M. Defourneau ◽  
...  

2008 ◽  
Vol 516 (8) ◽  
pp. 1693-1698 ◽  
Author(s):  
S.B. Tang ◽  
M.O. Lai ◽  
L. Lu

2011 ◽  
Vol 59 (3(1)) ◽  
pp. 2537-2541 ◽  
Author(s):  
Jungmin Park ◽  
Fumiya Gotoda ◽  
Seiji Nakashima ◽  
Takeshi Kanashima ◽  
Masanori Okuyama

Author(s):  
F.K. Shan ◽  
G.X. Liu ◽  
Byoung Chul Shin ◽  
Won Jae Lee ◽  
W.T. Oh

2006 ◽  
Vol 24 (4) ◽  
pp. 1623-1626 ◽  
Author(s):  
Artur Erlacher ◽  
Alejandra R. Lukaszew ◽  
Herbert Jaeger ◽  
Bruno Ullrich

2011 ◽  
Vol 11 (5) ◽  
pp. S79-S81 ◽  
Author(s):  
S. Saini ◽  
M. Takamura ◽  
M. Mukaida ◽  
S.-J. Kim

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