Energy levels, radiative rates and electron impact excitation rates for transitions in Si XII, Si XIII and Si XIV

2010 ◽  
Vol 82 (6) ◽  
pp. 065302 ◽  
Author(s):  
Kanti M Aggarwal ◽  
Francis P Keenan
Keyword(s):  
Electron Impact ◽  
Energy Levels ◽  
Impact Excitation ◽  
Electron Impact Excitation

scholarly journals Electron Impact Excitation of Extreme Ultra-Violet Transitions in Xe7+ – Xe10+ Ions

Atoms ◽  
2021 ◽  
Vol 9 (4) ◽  
pp. 76
Author(s):  
Aloka Kumar Sahoo ◽  
Lalita Sharma
Keyword(s):  
Electron Impact ◽  
Electron Energy ◽  
Cross Sections ◽  
Energy Levels ◽  
Ultra Violet ◽  
High Energy ◽  
Impact Excitation ◽  
Rate Coefficients ◽  
Electron Impact Excitation ◽  
Excitation Threshold

In the present work, a detailed study on the electron impact excitation of Xe7+, Xe8+, Xe9+ and Xe10+ ions for the dipole allowed (E1) transitions in the EUV range of 8–19 nm is presented. The multi-configuration Dirac–Fock method is used for the atomic structure calculation including the Breit and QED corrections along with the relativistic configuration interaction approach. We have compared our calculated energy levels, wavelengths and transition rates with other reported experimental and theoretical results. Further, the relativistic distorted wave method is used to calculate the cross sections from the excitation threshold to 3000 eV electron energy. For plasma physics applications, we have reported the fitting parameters of these cross sections using two different formulae for low and high energy ranges. The rate coefficients are also obtained using our calculated cross sections and considering the Maxwellian electron energy distribution function in the electron temperature range from 5 eV to 100 eV.

Sign in / Sign up

Export Citation Format

Share Document