Interest has recently increased in the possibility of growing III-V compounds epitactically on non-polar substrates to produce device quality material. Antiphase boundaries (APBs) may then develop in the GaAs epilayer because it has sphalerite structure (face-centered cubic with a two-atom basis). This planar defect may then influence the electrical behavior of the GaAs epilayer. The orientation of APBs and their propagation into GaAs epilayers have been investigated experimentally using both flat-on and cross-section transmission electron microscope techniques. APBs parallel to (110) plane have been viewed at the atomic resolution and compared to simulated images.Antiphase boundaries were observed in GaAs epilayers grown on (001) Ge substrates. In the image shown in Fig.1, which was obtained from a flat-on sample, the (110) APB planes can be seen end-on; the faceted APB is visible because of the stacking fault-like fringes arising from a lattice translation at this interface.
Localized modes on an Ablowitz–Ladik nonlinear impurity