Simulation of Chemical Processes in Repetitively Pulsed Atmospheric Plasmas

2005 ◽  
Vol 22 (11) ◽  
pp. 2888-2891 ◽  
Author(s):  
Fang Tong-Zhen ◽  
Ouyang Jian-Ming ◽  
Wang Long
Keyword(s):  
Chemical Processes ◽  
Atmospheric Plasmas

Numerical simulation of chemical processes in atmospheric plasmas

2004 ◽  
Vol 13 (12) ◽  
pp. 2174-2181 ◽  
Author(s):  
Ouyang Jian-Ming ◽  
Guo Wei ◽  
Wang Long ◽  
Shao Fu-Qiu
Keyword(s):  
Numerical Simulation ◽  
Chemical Processes ◽  
Atmospheric Plasmas

scholarly journals Numerical simulation of chemical processes in one-dimensional atmospheric plasmas

2006 ◽  
Vol 55 (9) ◽  
pp. 4974
Author(s):  
Ouyang Jian-Ming ◽  
Shao Fu-Qiu ◽  
Wang Long ◽  
Fang Tong-Zhen ◽  
Liu Jian-Quan
Keyword(s):  
Numerical Simulation ◽  
Chemical Processes ◽  
One Dimensional ◽  
Atmospheric Plasmas

Ultra Sensitive Analysis using Atmospheric Plasmas

2015 ◽  
Vol 135 (4) ◽  
pp. 226-229
Author(s):  
Ken KAKEGAWA ◽  
Mari AIDA ◽  
Akitoshi OKINO
Keyword(s):  
Sensitive Analysis ◽  
Atmospheric Plasmas

Electrical Damage Due to Low Energy Plasma Processing of GaAs Structures

1991 ◽  
Vol 223 ◽  
Author(s):  
Hans P. Zappe ◽  
Gudrun Kaufel
Keyword(s):  
Chemical Processes ◽  
Low Energy ◽  
Electrical Behavior ◽  
Rapid Thermal Anneal ◽  
High Temperature Anneal ◽  
Significant Damage ◽  
Low Energies ◽  
Long Time ◽  
Physical Plasma

ABSTRACTThe effect of numerous plasma reative ion etch and physical milling processes on the electrical behavior of GaAs bulk substrates has been investigated by means of electric microwave absorption. It was seen that plasma treatments at quite low energies may significantly affect the electrical quality of the etched semiconductor. Predominantly physical plasma etchants (Ar) were seen to create significant damage at very low energies. Chemical processes (involving Cl or F), while somewhat less pernicious, also gave rise to electrical substrate damage, the effect greater for hydrogenic ambients. Whereas rapid thermal anneal treatments tend to worsen the electrical integrity, some substrates respond positively to long-time high temperature anneal steps.

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