Temperature-Dependent Photoluminescence Analysis of 1.0 MeV Electron Irradiation-Induced Nonradiative Recombination Centers in n${}^{+}$–p GaAs Middle Cell of GaInP/GaAs/Ge Triple-Junction Solar Cells

2017 ◽  
Vol 34 (7) ◽  
pp. 076106 ◽  
Author(s):  
Jun-Ling Wang ◽  
Tian-Cheng Yi ◽  
Yong Zheng ◽  
Rui Wu ◽  
Rong Wang
2014 ◽  
Vol 31 (8) ◽  
pp. 086103 ◽  
Author(s):  
Rong Wang ◽  
Ming Lu ◽  
Tian-Cheng Yi ◽  
Kui Yang ◽  
Xiao-Xia Ji

Author(s):  
Ligang Yuan ◽  
Huiming Luo ◽  
Jiarong Wang ◽  
Zonghao Xu ◽  
Jiong Li ◽  
...  

The defects at the grain boundary, surface and interface, acting as nonradiative recombination centers, results in considerable energy loss of perovskite solar cells (PSCs). Herein, we passivated the defects of...


Author(s):  
Seonyong Park ◽  
Olivier Cavani ◽  
Jérémie Lefèvre ◽  
Carsten Baur ◽  
Victor Khorenko ◽  
...  

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