scholarly journals Al85Ni9Ta6, a refractory Al-rich ternary alloy glass and its crystallization kinetics

2009 ◽  
Vol 144 ◽  
pp. 012100
Author(s):  
E Fazakas ◽  
K Russew ◽  
L Stojanova ◽  
A Csanady ◽  
L K Varga
Keyword(s):  
Ternary Alloy ◽  
Crystallization Kinetics ◽  
Alloy Glass

Crystallization kinetics of a Se–Ge–Sb alloy glass

1976 ◽  
Vol 22 (1) ◽  
pp. 23-27 ◽  
Author(s):  
N. Clavaguera ◽  
M.T. Clavaguera-Mora ◽  
J. Casas-Vazquez
Keyword(s):  
Crystallization Kinetics ◽  
Alloy Glass ◽  
Kinetics Of

DOMAIN MICROSCOPY IN CHALCOGENIDE ALLOY GLASS THIN FILMS

1981 ◽  
Vol 42 (C4) ◽  
pp. C4-197-C4-200
Author(s):  
J. C. Phillips
Keyword(s):  
Thin Films ◽  
Alloy Glass

Synthesis and Crystallization Kinetics of Y 2CaA1 4SiO 12 Garnet-Type Glass-Ceramic

2020 ◽  
Author(s):  
Liyuan Wang ◽  
Jiaxi Liu ◽  
Nan Lu ◽  
Zengchao Yang ◽  
Gang He ◽  
...  
Keyword(s):  
Crystallization Kinetics ◽  
Glass Ceramic ◽  
Kinetics Of

Formal crystallization kinetics

1974 ◽  
Vol 39 (9) ◽  
pp. 2520-2531 ◽  
Author(s):  
O. Söhnel ◽  
M. Krpata
Keyword(s):  
Crystallization Kinetics

Acetate-Based Crystallization Kinetics Modulation of CsPbI2Br for Improved Photovoltaic Performance

2019 ◽  
Vol 3 (1) ◽  
pp. 658-665 ◽  
Author(s):  
Linfeng Ye ◽  
Hongyue Wang ◽  
Yang Wei ◽  
Pengfei Guo ◽  
Xiaokun Yang ◽  
...  
Keyword(s):  
Crystallization Kinetics ◽  
Photovoltaic Performance

Reordering and Crystallization of Silicon Carbide Amorphized by Neutron Irradiation

2000 ◽  
Vol 650 ◽  
Author(s):  
Lance L. Snead ◽  
Martin Balden
Keyword(s):  
Thin Film ◽  
Silicon Carbide ◽  
Crystallization Kinetics ◽  
Neutron Irradiation ◽  
Onset Temperature ◽  
Kinetics Of Crystallization ◽  
Crystallization Onset Temperature ◽  
Crystallization Onset ◽  
Kinetics Of

ABSTRACTDensification and crystallization kinetics of bulk SiC amorphized by neutron irradiation is studied. The temperature of crystallization onset of this highly pure, fully amorphous bulk SiC was found to be between 875-885°C and crystallization is nearly complete by 950°C. In-situ TEM imaging confirms the onset of crystallization, though thin-film effects apparently alter the kinetics of crystallization above this temperature. It requires >1125°C for complete crystallization of the TEM foil. Annealing at temperatures between the irradiation and crystallization onset temperature is seen to cause significant densification attributed to a relaxation, or reordering, of the as-amorphized structure.

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