Simultaneous measurement of volume and grain boundary diffusivity separately in Fe thin film with stable nanostructure using polarized neutron reflectivity

2016 ◽  
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Sujay Chakravarty ◽  
Neeraj Shukla ◽  
Anton Devishvili ◽  
Alexei Vorobiev ◽  
G Amarendra
2009 ◽  
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M. W. Wisemayer ◽  
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S. L. Lee ◽  
...  

10.5772/62726 ◽  
2016 ◽  
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Xiaowei Zhang ◽  
Nian Ji ◽  
Valeria Lauter ◽  
Haile Ambaye ◽  
Jian-Ping Wang

2000 ◽  
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C. C Han

1999 ◽  
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P. F. Miceli ◽  
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...  

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I. V. Roshchin ◽  
...  

Author(s):  
Jin Young Kim ◽  
R. E. Hummel ◽  
R. T. DeHoff

Gold thin film metallizations in microelectronic circuits have a distinct advantage over those consisting of aluminum because they are less susceptible to electromigration. When electromigration is no longer the principal failure mechanism, other failure mechanisms caused by d.c. stressing might become important. In gold thin-film metallizations, grain boundary grooving is the principal failure mechanism.Previous studies have shown that grain boundary grooving in gold films can be prevented by an indium underlay between the substrate and gold. The beneficial effect of the In/Au composite film is mainly due to roughening of the surface of the gold films, redistribution of indium on the gold films and formation of In2O3 on the free surface and along the grain boundaries of the gold films during air annealing.


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2014 ◽  
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pp. 31-33 ◽  
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Surendra Singh ◽  
Debarati Bhattacharya ◽  
Saibal Basu

2011 ◽  
Vol 65 (6) ◽  
pp. 513-515 ◽  
Author(s):  
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Adam L. Pilchak ◽  
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Reji John

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