Evaluation of grain boundary trap states in polycrystalline–silicon thin-film transistors by mobility and capacitance measurements

2002 ◽  
Vol 91 (7) ◽  
pp. 4637-4645 ◽  
Author(s):  
H. Ikeda
Keyword(s):  
Thin Film ◽  
Grain Boundary ◽  
Thin Film Transistors ◽  
Polycrystalline Silicon ◽  
Trap States ◽  
Silicon Thin Film ◽  
Capacitance Measurements

Extraction of Trap States at the Oxide-Silicon Interface and Grain Boundary in Polycrystalline Silicon Thin-Film Transistors

2001 ◽  
Vol 40 (Part 1, No. 1) ◽  
pp. 112-113 ◽  
Author(s):  
Mutsumi Kimura ◽  
Ryoichi Nozawa ◽  
Satoshi Inoue ◽  
Tatsuya Shimoda ◽  
Basil On-Kit Lui ◽  
...  
Keyword(s):  
Thin Film ◽  
Grain Boundary ◽  
Thin Film Transistors ◽  
Polycrystalline Silicon ◽  
Trap States ◽  
Silicon Thin Film ◽  
Silicon Interface

Extraction of Trap States at the Oxide-Silicon Interface and Grain Boundary for Polycrystalline Silicon Thin-Film Transistors

2001 ◽  
Vol 40 (Part 1, No. 9A) ◽  
pp. 5227-5236 ◽  
Author(s):  
Mutsumi Kimura ◽  
Ryoichi Nozawa ◽  
Satoshi Inoue ◽  
Tatsuya Shimoda ◽  
Basil On-Kit Lui ◽  
...  
Keyword(s):  
Thin Film ◽  
Grain Boundary ◽  
Thin Film Transistors ◽  
Polycrystalline Silicon ◽  
Trap States ◽  
Silicon Thin Film ◽  
Silicon Interface

Grain Boundary Characterisation in Sequentially Laterally Solidified Polycrystalline-Silicon Thin Film Transistors

2019 ◽  
Vol 8 (1) ◽  
pp. 211-216
Author(s):  
Antonio Valletta ◽  
Alessandra Bonfiglietti ◽  
Matteo Rapisarda ◽  
Alessandro Pecora ◽  
Luigi Mariucci ◽  
...  
Keyword(s):  
Thin Film ◽  
Grain Boundary ◽  
Thin Film Transistors ◽  
Polycrystalline Silicon ◽  
Silicon Thin Film

EFFECT OF TRAP STATES AT THE OXIDE-SILICON INTERFACE IN POLYCRYSTALLINE SILICON THIN-FILM TRANSISTORS

2008 ◽  
Vol 22 (30) ◽  
pp. 5357-5364
Author(s):  
NAVNEET GUPTA
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Polycrystalline Silicon ◽  
Gate Oxide ◽  
Oxide Thickness ◽  
State Density ◽  
Trap States ◽  
Silicon Thin Film ◽  
Gate Oxide Thickness ◽  
Silicon Interface

This work presents the study of the effect of trap states at the oxide-silicon interface in lightly doped polycrystalline silicon thin-film transistors with large grains. In this study, it is assumed that the oxide-silicon interface traps are evenly distributed throughout the interface region and single grain boundary is present in the channel of poly-Si TFT. It is shown that improved device characteristics can be obtained by reducing the gate oxide thickness. It is also observed that as gate oxide thickness decreases for a constant value of trap state density in the oxide-silicon interface, the gate voltage required for channel formation is lowered and leads to a decrease in threshold voltage of the device. Calculated and experimental results are also found to be well consistent with each other.

Direct observation of grain boundary effects in polycrystalline silicon thin‐film transistors

1982 ◽  
Vol 40 (7) ◽  
pp. 598-600 ◽  
Author(s):  
H. J. Leamy ◽  
R. C. Frye ◽  
K. K. Ng ◽  
G. K. Celler ◽  
E. I. Povilonis ◽  
...  
Keyword(s):  
Thin Film ◽  
Grain Boundary ◽  
Direct Observation ◽  
Thin Film Transistors ◽  
Polycrystalline Silicon ◽  
Boundary Effects ◽  
Silicon Thin Film ◽  
Grain Boundary Effects

Noise Sources in Polycrystalline Silicon Thin-Film Transistors

2002 ◽  
Vol 744 ◽  
Author(s):  
Il Ki Han ◽  
Young Ju Park ◽  
Woon Jo Cho ◽  
Won Jun Choi ◽  
Jungil Lee ◽  
...  
Keyword(s):  
Thin Film ◽  
Grain Boundary ◽  
Barrier Height ◽  
Thin Film Transistors ◽  
Polycrystalline Silicon ◽  
Low Frequency ◽  
Frequency Noise ◽  
Silicon Thin Film ◽  
Noise Sources ◽  
New Device

ABSTRACTSources for low frequency noise in polycrystalline silicon thin-film transistors are analytically investigated. The grain boundary is modeled as symmetric Schottky barrier and a new device equation for current conduction in thin-film transistors is presented. At lower currents where barrier height is large enough to provide necessary distribution of time constants for 1/f noise, the number fluctuation via barrier height modulation at the grain boundary is found to be the main noise generation mechanism. At higher currents, mobility and diffusivity fluctuation are found to be dominant

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