R-matrix treatment of high-energy electron-impact excitation processes: The generalized oscillator strengths for the Na3s−3pand2p−3stransitions

2008 ◽  
Vol 78 (5) ◽  
Author(s):  
Xiaoying Han ◽  
Yueming Li ◽  
Hong Zhang ◽  
Jun Yan ◽  
JiaMing Li ◽  
...  
Keyword(s):  
Electron Impact ◽  
High Energy ◽  
Energy Electron ◽  
Oscillator Strengths ◽  
Impact Excitation ◽  
Electron Impact Excitation ◽  
High Energy Electron ◽  
R Matrix ◽  
Generalized Oscillator ◽  
Excitation Processes

scholarly journals Electron Impact Excitation Cross Sections for B III

1983 ◽  
Vol 36 (5) ◽  
pp. 659
Author(s):  
PS Ganas ◽  
M Aryafar ◽  
LP Gately
Keyword(s):  
Electron Impact ◽  
Excited States ◽  
Cross Sections ◽  
Born Approximation ◽  
Oscillator Strengths ◽  
Impact Excitation ◽  
Electron Impact Excitation ◽  
Central Potential ◽  
Excitation Cross Sections ◽  
Generalized Oscillator

A realistic analytical central potential with two adjustable parameters is used to generate wavefunctions for the ground and excited states of doubly ionized boron. Generalized oscillator strengths and integrated cross sections from threshold up to 5 keY are calculated in the Born approximation for 2s-ns, 2s-np and 2s-nd excitations. Convenient analytic formulae for the cross sections are presented.

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