scholarly journals Optical detection of electron-nuclear double resonance for anS=1 luminescent center in GaP:O

1991 ◽  
Vol 43 (3) ◽  
pp. 2141-2151 ◽  
Author(s):  
J. F. Donegan ◽  
D. Y. Jeon ◽  
G. D. Watkins
Author(s):  
F. K. Koschnick ◽  
K. Michael ◽  
J.-M. Spaeth ◽  
B. Beaumont ◽  
Pierre Gibart

Optically detected electron nuclear double resonance (ODENDOR) was measured in the 2.2 eV ‘yellow’ luminescence band associated with the residual donor in n-type undoped GaN. The ODENDOR lines are due to gallium and show a quadrupole splitting which can be described with an axial tensor. The quadrupole parameter was estimated to be q(69Ga) = 1/2 Qzz = 0.22 MHz. A hyperfine interaction for 69Ga of about 0.3 MHz for the isotropic and of about 0.15 MHz for the anisotropic part was estimated from the width of the ODENDOR lines. It is tentatively suggested that a Ga interstitial is the residual donor.


1989 ◽  
Vol 39 (5) ◽  
pp. 3207-3215 ◽  
Author(s):  
D. Y. Jeon ◽  
J. F. Donegan ◽  
G. D. Watkins

1996 ◽  
Vol 54 (16) ◽  
pp. R11042-R11045 ◽  
Author(s):  
F. K. Koschnick ◽  
K. Michael ◽  
J. -M. Spaeth ◽  
B. Beaumont ◽  
P. Gibart

1996 ◽  
Vol 442 ◽  
Author(s):  
J.-M. Spaeth ◽  
S. Greulich-Weber ◽  
M. März ◽  
E. N. Kalabukhova ◽  
S. N. Lukin

AbstractThe electronic structure of nitrogen donors in 6H-, 4H- and 3C-SiC is investigated by measuring the nitrogen hyperfine (hf) interactions with electron nuclear double resonance (ENDOR) and the temperature dependence of the hf split electron paramagnetic resonance (EPR) spectra. Superhyperfine (shf) interactions with many shells of 13C and 29Si were measured in 6H-SiC. The hf and shf interactions are discussed in the framework of effective mass theory. The temperature dependence is explained with the thermal occupation of the lowest valley-orbit split A1 and E states. It is proposed that the EPR spectra of P donors observed previously in neutron transmuted 6H-SiC at low temperature (<10K) and high temperature (>60K) are all due to substitutional P donors on the two quasi-cubic and hexagonal Si sites, whereby at low temperature the E state is occupied and at high temperature the A1 state. The low temperature spectra are thus thought not to be due to P-vacancy pair defects as proposed previously.


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