Defect formation inLaGa(Mg,Ni)O3−δ: A statistical thermodynamic analysis validated by mixed conductivity and magnetic susceptibility measurements

2006 ◽  
Vol 74 (6) ◽  
Author(s):  
E. N. Naumovich ◽  
V. V. Kharton ◽  
A. A. Yaremchenko ◽  
M. V. Patrakeev ◽  
D. G. Kellerman ◽  
...  
Keyword(s):  
Magnetic Susceptibility ◽  
Thermodynamic Analysis ◽  
Defect Formation ◽  
Statistical Thermodynamic ◽  
Mixed Conductivity

Thermodynamics of Defect Formation and Hydration of Y2O3

2012 ◽  
Vol 326-328 ◽  
pp. 126-131 ◽  
Author(s):  
L.P. Putilov ◽  
V.I. Tsidilkovski ◽  
A.N. Varaksin ◽  
Anatoly Yakovlevich Fishman
Keyword(s):  
Electronic Structure ◽  
Gas Phase ◽  
Defect Formation ◽  
Thermodynamic Description ◽  
Statistical Thermodynamic ◽  
Wide Range ◽  
F Center ◽  
Mechanical Approach ◽  
Quantum Mechanical Approach ◽  
F Centers

Defect formation in yttria with a small content of acceptor impurities in equilibrium with a hydrogen-containing gas phase is studied theoretically. A statistical-thermodynamic description of the yttriagas equilibrium is based on the approach developed for compounds with a complex electronic structure [Phys. Stat. Sol. B (1991) Vol. 168, p. 233]. The considered model of electronic structure for Y2O3 includes, besides valence and conduction bands, acceptor and F-center states. The energy of F-centers was calculated in the framework of the variational quantum-mechanical approach combined with the molecular statics method. It is shown that acceptor states appreciably affect the thermodynamics of defect formation, while the F-centers contribution in a wide range of external parameters is small. The concentrations of defects (protons, oxygen vacancies, electronic defects) and the Fermi level position are determined as functions of temperature and gas phase parameters.

scholarly journals Influence of growth impurities on thermal defect formation in monocrystalline silicon

2021 ◽  
Vol 22 (3) ◽  
pp. 437-443
Author(s):  
Yu.V. Pavlovskyy ◽  
O.V. Berbets ◽  
P.G. Lytovchenko
Keyword(s):  
Heat Treatment ◽  
Magnetic Susceptibility ◽  
Single Crystals ◽  
Structural Properties ◽  
Defect Formation ◽  
Experimental Results ◽  
Defects In Crystals ◽  
Structural Defects ◽  
Annealing Temperatures ◽  
Thermal Defect

The influence of growth impurities (oxygen and carbon) on the thermalsdefect formation in silicon single crystals has been studied. Annealing was carried out in the temperature range 700-1100°C in steps of 50°C for 5 hours at each temperature. The magnetic, micromechanical and structural properties of annealed silicon single crystals have been experimentally studied. The distribution of defects formed at different annealing temperatures has been studied. The correlation between changes of magnetic susceptibility, microhardness and rearrangement of structural defects in crystals after their heat treatment is revealed. Concentrations and sizes of magnetically ordered clusters are estimated. Interpretation of the obtained experimental results is offered.

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