Crystal orientation effects on the piezoelectric field of strained zinc-blende quantum-well structures

2008 ◽  
Vol 78 (20) ◽  
Author(s):  
Lars Duggen ◽  
Morten Willatzen ◽  
Benny Lassen
Author(s):  
A.N. Cartwright ◽  
Paul M. Sweeney ◽  
Thomas Prunty ◽  
David P. Bour ◽  
Michael Kneissl

The presence of piezoelectric fields within p-i-n GaN/InGaN multiple quantum well structures is discussed. Time integrated and time-resolved photoluminescence measurements and theoretical calculations of the effect of these fields is presented. Furthermore, a description of how these fields influence the carrier dynamics and a discussion of how the piezoelectric field effects the design of GaN/InGaN devices is presented.


2001 ◽  
Vol 79 (10) ◽  
pp. 1477-1479 ◽  
Author(s):  
Chii-Chang Chen ◽  
Kun-Long Hsieh ◽  
Jinn-Kong Sheu ◽  
Gou-Chung Chi ◽  
Ming-Juinn Jou ◽  
...  

1989 ◽  
Vol 55 (20) ◽  
pp. 2087-2089 ◽  
Author(s):  
S. M. Durbin ◽  
J. Han ◽  
Sungki O ◽  
M. Kobayashi ◽  
D. R. Menke ◽  
...  

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