scholarly journals Effect of negative chemical pressure on the prototypical itinerant magnet MnSi

2017 ◽  
Vol 95 (2) ◽  
Author(s):  
C. Dhital ◽  
M. A. Khan ◽  
M. Saghayezhian ◽  
W. A. Phelan ◽  
D. P. Young ◽  
...  
2021 ◽  
Vol 11 (1) ◽  
Author(s):  
Licheng Fu ◽  
Yilun Gu ◽  
Guoxiang Zhi ◽  
Haojie Zhang ◽  
Rufei Zhang ◽  
...  

AbstractWe report the effect of chemical pressure on the ferromagnetic ordering of the recently reported n-type diluted magnetic semiconductor Ba(Zn$$_{1-x}$$ 1 - x Co$$_{x}$$ x )$$_{2}$$ 2 As$$_{2}$$ 2 which has a maximum $$T_C$$ T C $$\sim$$ ∼ 45 K. Doping Sb into As-site and Sr into Ba-site induces negative and positive chemical pressure, respectively. While conserving the tetragonal crystal structure and n-type carriers, the unit cell volume shrink by $$\sim$$ ∼ 0.3$$\%$$ % with 15$$\%$$ % Sr doping, but drastically increase the ferromagnetic transition temperature by 18$$\%$$ % to 53 K. Our experiment unequivocally demonstrate that the parameters of Zn(Co)As$$_{4}$$ 4 tetrahedra play a vital role in the formation of ferromagnetic ordering in the Ba(Zn,Co)$$_{2}$$ 2 As$$_{2}$$ 2 DMS.


2021 ◽  
pp. 2102917
Author(s):  
Ruijin Sun ◽  
Shifeng Jin ◽  
Jun Deng ◽  
Munan Hao ◽  
Xin Zhong ◽  
...  

2021 ◽  
Vol 118 (21) ◽  
pp. 212408
Author(s):  
Timothy Q. Hartnett ◽  
Vaibhav Sharma ◽  
Radhika Barua ◽  
Prasanna V. Balachandran

2021 ◽  
Vol 114 ◽  
pp. 106562
Author(s):  
Tauseef Ahmed ◽  
Salman Ali Khan ◽  
JiHee Bae ◽  
Muhammad Habib ◽  
Fazli Akram ◽  
...  

2012 ◽  
Vol 112 (7) ◽  
pp. 073516 ◽  
Author(s):  
B. Ramachandran ◽  
M. S. Ramachandra Rao

2011 ◽  
Vol 23 (9) ◽  
pp. 094208 ◽  
Author(s):  
H Winkler ◽  
K-A Lorenzer ◽  
S Laumann ◽  
J Custers ◽  
A Prokofiev ◽  
...  

2007 ◽  
Vol 75 (11) ◽  
Author(s):  
M. Corti ◽  
F. Carbone ◽  
M. Filibian ◽  
Th. Jarlborg ◽  
A. A. Nugroho ◽  
...  

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