scholarly journals Thermal fluctuations and carrier localization induced by dynamic disorder in MAPbI3 described by first-principles based tight-binding model

2021 ◽  
Vol 5 (8) ◽  
Author(s):  
David J. Abramovitch ◽  
Wissam A. Saidi ◽  
Liang Z. Tan
2007 ◽  
Vol 1017 ◽  
Author(s):  
T. Hammerschmidt ◽  
M. A. Migliorato ◽  
D. Powell ◽  
A. G. Cullis ◽  
G. P. Srivastava

AbstractWe propose a tight-binding model for the polarization that considers direct and dipole contributions and employs microscopic quantities that can be calculated by first-principles methods, e.g. by employing Density Functional Theory (DFT). Applying our model to InxGa1-xAs alloys allows us to settle discrepancies between the values of e14 as obtained from experiments and from linear interpolations between the values of InAs and GaAs. Our calculated piezoelectric coefficient is in very good agreement with photo current measurements of InAs/GaAs(111) quantum well samples.


2018 ◽  
Vol 27 (8) ◽  
pp. 087101 ◽  
Author(s):  
Shi-Ru Song ◽  
Ji-Hui Yang ◽  
Shi-Xuan Du ◽  
Hong-Jun Gao ◽  
Boris I Yakobson

AIP Advances ◽  
2021 ◽  
Vol 11 (1) ◽  
pp. 015127
Author(s):  
Qiuyuan Chen ◽  
Jiawei Chang ◽  
Lin Ma ◽  
Chenghan Li ◽  
Liangfei Duan ◽  
...  

2021 ◽  
Vol 154 (16) ◽  
pp. 164115
Author(s):  
Rebecca K. Lindsey ◽  
Sorin Bastea ◽  
Nir Goldman ◽  
Laurence E. Fried

2005 ◽  
Vol 31 (8) ◽  
pp. 585-595 ◽  
Author(s):  
D. A. Areshkin ◽  
O. A. Shenderova ◽  
J. D. Schall ◽  
D. W. Brenner

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