Microwave noise characterization of GaAs MESFET's: determination of extrinsic noise parameters

1988 ◽  
Vol 36 (4) ◽  
pp. 745-751 ◽  
Author(s):  
M.S. Gupta ◽  
P.T. Greiling
Keyword(s):  
Extrinsic Noise ◽  
Noise Parameters ◽  
Noise Characterization ◽  
Microwave Noise

WAVE-BASED APPROACH FOR MICROWAVE NOISE CHARACTERIZATION

2008 ◽  
Vol 08 (01) ◽  
pp. R1-R14 ◽  
Author(s):  
C. H. CHEN ◽  
Y. L. WANG ◽  
M. H. BAKR
Keyword(s):  
Intrinsic Noise ◽  
Noise Parameters ◽  
Noise Characterization ◽  
Measurement Approach ◽  
Microwave Noise

The noise behavior of a two-port is usually described through the conventional set of noise parameters Fmin, Rn, and the complex Yopt. However, noise parameters developed using wave-based techniques also have their merit as they could offer different insights to a two-port's noise behavior. Unlike the conventional noise parameters, these wave-based noise parameters could be terminal-invariant and describe only the intrinsic noise behavior of a two-port. In this paper, several important noise parameters derived from wave-based approaches are reviewed. The derivation of each set of parameters is discussed and illustrated. The measurement approach of each set of parameters is also briefly covered.

scholarly journals Microwave noise characterization of graphene field effect transistors

2014 ◽  
Vol 104 (1) ◽  
pp. 013502 ◽  
Author(s):  
M. Tanzid ◽  
M. A. Andersson ◽  
J. Sun ◽  
J. Stake
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Noise Characterization ◽  
Microwave Noise
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