International Electron Devices Meeting 1998. Technical Digest (Cat. No.98CH36217)

A novel 4.6F/sup 2/ NOR cell technology with lightly doped source (LDS) junction for high density flash memories

International Electron Devices Meeting 1998. Technical Digest (Cat. No.98CH36217) ◽

10.1109/iedm.1998.746518 ◽

2002 ◽

Author(s):

Jonghan Kim ◽

Jeong-Hyuk Choi ◽

Yong-Ju Choi ◽

Hun-Kyu Lee ◽

Kyeong-Tae Kim ◽

...

Keyword(s):

High Density ◽

Flash Memories ◽

Cell Technology

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Beyond TED: understanding boron shallow junction formation

International Electron Devices Meeting 1998. Technical Digest (Cat. No.98CH36217) ◽

10.1109/iedm.1998.746407 ◽

2002 ◽

Cited By ~ 3

Author(s):

S.T. Dunham ◽

S. Chakravarthi ◽

A.H. Gencer

Keyword(s):

Shallow Junction ◽

Junction Formation

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Novel co-sputtered fluorinated amorphous carbon films for sub-0.25 μm low κ damascene multilevel interconnect applications

International Electron Devices Meeting 1998. Technical Digest (Cat. No.98CH36217) ◽

10.1109/iedm.1998.746487 ◽

2002 ◽

Author(s):

W. Zhu ◽

C.S. Pai ◽

H.E. Bair ◽

H.W. Krautter ◽

R.L. Opila ◽

...

Keyword(s):

Amorphous Carbon ◽

Carbon Films ◽

Amorphous Carbon Films

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Stress analysis of shallow trench isolation for 256 M DRAM and beyond

International Electron Devices Meeting 1998. Technical Digest (Cat. No.98CH36217) ◽

10.1109/iedm.1998.746300 ◽

2002 ◽

Cited By ~ 9

Author(s):

T. Kuroi ◽

T. Uchida ◽

K. Horita ◽

M. Sakai ◽

Y. Inoue ◽

...

Keyword(s):

Stress Analysis ◽

Shallow Trench Isolation ◽

Trench Isolation

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A fast 3D modeling approach to parasitics extraction of bonding wires for RF circuits

International Electron Devices Meeting 1998. Technical Digest (Cat. No.98CH36217) ◽

10.1109/iedm.1998.746359 ◽

2002 ◽

Cited By ~ 1

Author(s):

Xiaoning Qi ◽

C.P. Yue ◽

T. Amborg ◽

H.T. Soh ◽

Zhiping Yu ◽

...

Keyword(s):

3D Modeling ◽

Rf Circuits ◽

Modeling Approach ◽

Bonding Wires ◽

Parasitics Extraction

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Improving gate oxide integrity (GOI) of a W/WNx/dual-poly Si stacked-gate by using wet-hydrogen oxidation in 0.14-μm CMOS devices

International Electron Devices Meeting 1998. Technical Digest (Cat. No.98CH36217) ◽

10.1109/iedm.1998.746383 ◽

2002 ◽

Cited By ~ 3

Author(s):

K. Ohnishi ◽

N. Yamamoto ◽

T. Uchino ◽

Y. Hanaoka ◽

R. Tsuchiya ◽

...

Keyword(s):

Hydrogen Oxidation ◽

Gate Oxide ◽

Gate Oxide Integrity

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Novel 0.44 μm/sup 2/ Ti-salicide STI cell technology for high-density NOR flash memories and high performance embedded application

International Electron Devices Meeting 1998. Technical Digest (Cat. No.98CH36217) ◽

10.1109/iedm.1998.746517 ◽

2002 ◽

Author(s):

H. Watanabe ◽

S. Yamada ◽

M. Tanimoto ◽

M. Matsui ◽

S. Kitamura ◽

...

Keyword(s):

High Performance ◽

High Density ◽

Flash Memories ◽

Cell Technology ◽

Embedded Application ◽

Nor Flash

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Transferred-substrate HBTs with 250 GHz current-gain cutoff frequency

International Electron Devices Meeting 1998. Technical Digest (Cat. No.98CH36217) ◽

10.1109/iedm.1998.746442 ◽

2002 ◽

Cited By ~ 4

Author(s):

D. Mensa ◽

Q. Lee ◽

J. Guthrie ◽

S. Jaganathan ◽

M.J.W. Rodwell

Keyword(s):

Cutoff Frequency ◽

Current Gain

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A new dynamic-threshold SOI device having an embedded resistor and a merged body-bias-control transistor

International Electron Devices Meeting 1998. Technical Digest (Cat. No.98CH36217) ◽

10.1109/iedm.1998.746388 ◽

2002 ◽

Cited By ~ 3

Author(s):

M. Horiuchi

Keyword(s):

Dynamic Threshold ◽

Body Bias

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Fabrication method for IC-oriented Si twin island single electron transistors

International Electron Devices Meeting 1998. Technical Digest (Cat. No.98CH36217) ◽

10.1109/iedm.1998.746294 ◽

2002 ◽

Cited By ~ 2

Author(s):

Y. Ono ◽

Y. Takahashi ◽

M. Yamazaki ◽

M. Nagase ◽

H. Namatsu ◽

...

Keyword(s):

Single Electron ◽

Fabrication Method ◽

Single Electron Transistors ◽

Electron Transistors

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International Electron Devices Meeting 1998. Technical Digest (Cat. No.98CH36217)
Latest Publications

TOTAL DOCUMENTS

H-INDEX

Published By IEEE

A novel 4.6F/sup 2/ NOR cell technology with lightly doped source (LDS) junction for high density flash memories

Beyond TED: understanding boron shallow junction formation

Novel co-sputtered fluorinated amorphous carbon films for sub-0.25 μm low κ damascene multilevel interconnect applications

Stress analysis of shallow trench isolation for 256 M DRAM and beyond

A fast 3D modeling approach to parasitics extraction of bonding wires for RF circuits

Improving gate oxide integrity (GOI) of a W/WNx/dual-poly Si stacked-gate by using wet-hydrogen oxidation in 0.14-μm CMOS devices

Novel 0.44 μm/sup 2/ Ti-salicide STI cell technology for high-density NOR flash memories and high performance embedded application

Transferred-substrate HBTs with 250 GHz current-gain cutoff frequency

A new dynamic-threshold SOI device having an embedded resistor and a merged body-bias-control transistor

Fabrication method for IC-oriented Si twin island single electron transistors

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International Electron Devices Meeting 1998. Technical Digest (Cat. No.98CH36217)Latest Publications

TOTAL DOCUMENTS

H-INDEX

Published By IEEE

A novel 4.6F/sup 2/ NOR cell technology with lightly doped source (LDS) junction for high density flash memories

Beyond TED: understanding boron shallow junction formation

Novel co-sputtered fluorinated amorphous carbon films for sub-0.25 μm low κ damascene multilevel interconnect applications

Stress analysis of shallow trench isolation for 256 M DRAM and beyond

A fast 3D modeling approach to parasitics extraction of bonding wires for RF circuits

Improving gate oxide integrity (GOI) of a W/WNx/dual-poly Si stacked-gate by using wet-hydrogen oxidation in 0.14-μm CMOS devices

Novel 0.44 μm/sup 2/ Ti-salicide STI cell technology for high-density NOR flash memories and high performance embedded application

Transferred-substrate HBTs with 250 GHz current-gain cutoff frequency

A new dynamic-threshold SOI device having an embedded resistor and a merged body-bias-control transistor

Fabrication method for IC-oriented Si twin island single electron transistors

International Electron Devices Meeting 1998. Technical Digest (Cat. No.98CH36217)
Latest Publications