Class-F GaN power amplifier design using model-based nonlinear embedding

Author(s):  
Samarth Saxena ◽  
Karun Rawat ◽  
Patrick Roblin
2014 ◽  
Vol 62 (9) ◽  
pp. 1986-2002 ◽  
Author(s):  
Haedong Jang ◽  
Patrick Roblin ◽  
Zhijian Xie

2019 ◽  
Vol 29 (11) ◽  
pp. 714-717 ◽  
Author(s):  
Y. Mary Asha Latha ◽  
Karun Rawat ◽  
Patrick Roblin

Frequenz ◽  
2021 ◽  
Vol 0 (0) ◽  
Author(s):  
Saeedeh Lotfi ◽  
Saeed Roshani ◽  
Sobhan Roshani ◽  
Maryam Shirzadian Gilan

Abstract This paper presents a new Doherty power amplifier (DPA) with harmonics suppression. A Wilkinson power divider (WPD) with open-ended and short-ended stubs is designed to suppress unwanted signals. To design the power divider in the circuit of the DPA, even and odd mode analyses are utilized. The proposed design operates at range of 1.2–1.6 GHz. The linearity of the suggested DPA is increased about 6 dBm, in comparison with the main amplifier. The designed Doherty amplifier has a power added efficiency (PAE), drain efficiency (DE) and Gain about 60, 61% and 19 dB, respectively. The designed WPD suppresses 2nd up to 14th harmonics with more than 20 dB suppression level, which is useful for suppressing unwanted harmonics in DPA design. ATF-34143 transistors (pHEMT technology) are used for this DPA amplifier design. The main amplifier has class-F topology and class-F inverse topology is used for auxiliary amplifier.


Author(s):  
Paolo Colantonio ◽  
Franco Giannini ◽  
Giorgio Leuzzi ◽  
Ernesto Limiti

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