2018 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS)
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65

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5

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9781538665022

Latest Documents Most Cited Documents Contributed Authors Related Sources Related Keywords

Large-Swing 22nm Si/SiGe FDSOI Stacked Cascodes for 56GBaud Drivers and 5G PAs

2018 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS) ◽

10.1109/bcicts.2018.8550932 ◽

2018 ◽

Author(s):

M. Sadegh Dadash ◽

David Harame ◽

Sorin P. Voinigescu

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GaN HEMT for Space Applications

2018 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS) ◽

10.1109/bcicts.2018.8551070 ◽

2018 ◽

Author(s):

Tomio Satoh ◽

Ken Osawa ◽

Atsushi Nitta

Keyword(s):

Space Applications ◽

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Integrated 220–260 GHz Radar Frontend

2018 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS) ◽

10.1109/bcicts.2018.8550939 ◽

2018 ◽

Author(s):

Thomas Merkle ◽

Sandrine Wagner ◽

Axel Tessmann ◽

Michael Kuri ◽

Hermann Massler ◽

...

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An Adaptable 6.4 - 32 GS/s Track-and-Hold Amplifier with Track-Mode Masking for High Signal Power Applications in 55 nm SiGe-BiCMOS

2018 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS) ◽

10.1109/bcicts.2018.8550911 ◽

2018 ◽

Author(s):

P. Thomas ◽

M. Buck ◽

M. Grozing ◽

M. Berroth ◽

J. Rauscher ◽

...

Keyword(s):

High Signal ◽

Signal Power ◽

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Integration of SiGe HBT with $\text{f}_{\text{T}}=305\ \text{GHz},\ \text{f}_{\max}=537 \text{GHz}$ in 130nm and 90nm CMOS

2018 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS) ◽

10.1109/bcicts.2018.8550922 ◽

2018 ◽

Author(s):

D. Manger ◽

W. Liebl ◽

S. Boguth ◽

B. Binder ◽

K. Aufinger ◽

...

Keyword(s):

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Scaling of InP/GaAsSb DHBTs: A Simultaneous $f_{\text{T}}/f_{\text{MAX}}=463/829$ GHz in a $10\ \mu \text{m}$ Long Emitter

2018 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS) ◽

10.1109/bcicts.2018.8551036 ◽

2018 ◽

Author(s):

A. M. Arabhavi ◽

W. Quan ◽

O. Ostinelli ◽

C.R. Bolognesi

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Indium Phosphide Photonic Integrated Circuits: Technology and Applications

2018 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS) ◽

10.1109/bcicts.2018.8550947 ◽

2018 ◽

Author(s):

Jonathan Klamkin ◽

Hongwei Zhao ◽

Bowen Song ◽

Yuan Liu ◽

Brandon Isaac ◽

...

Keyword(s):

Integrated Circuits ◽

Indium Phosphide ◽

Photonic Integrated Circuits

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Analysis of Breakdown Characteristics of AIGaN/GaN HEMTs with Low- $k$ IHigh- $k$ Double Passivation Layers Paper Title

2018 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS) ◽

10.1109/bcicts.2018.8551096 ◽

2018 ◽

Author(s):

Kai Nakamura ◽

Hideyuki Hanawa ◽

Kazushige Horio

Keyword(s):

Passivation Layers ◽

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Quantification of Dopant Profiles in SiGe HBT Devices

2018 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS) ◽

10.1109/bcicts.2018.8551114 ◽

2018 ◽

Author(s):

Eric J. Jones ◽

Jonathan Poplawsky ◽

Donavan Leonard ◽

Keith Chung ◽

Kevin Mercurio ◽

...

Keyword(s):

Sige Hbt ◽

Dopant Profiles

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A 6 kV ESD-Protected Low-Power 24 GHz LNA for Radar Applications in SiGe BiCMOS

2018 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS) ◽

10.1109/bcicts.2018.8550914 ◽

2018 ◽

Author(s):

Vadim Issakov ◽

Sebastian Kehl-Waas ◽

Radu Ciocoveanu ◽

Werner Simburger ◽

Angelika Geiselbrechtinger

Keyword(s):

Low Power ◽

Sige Bicmos ◽

Radar Applications ◽

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