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Low frequency noise characterization of the GaN LEDs
The Fifth International Conference on Advanced Semiconductor Devices and Microsystems, 2004. ASDAM 2004.
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10.1109/asdam.2004.1441163
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2005
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Author(s):
S. Bychikhin
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L.K.J. Vandamme
◽
J. Kuzmik
◽
G. Meneghesso
◽
D. Pogany
Keyword(s):
Low Frequency
◽
Frequency Noise
◽
Low Frequency Noise
◽
Noise Characterization
Download Full-text
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2004
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Low-frequency Noise Characterization of Hot-electron Degradation in GaN-based HEMTs
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Low Frequency
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Low-frequency noise characterization of latent damage in thin oxides subjected to high-field impulse stressing
IEEE Electron Device Letters
◽
10.1109/55.720187
◽
1998
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Vol 19
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◽
pp. 363-366
◽
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◽
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◽
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◽
D.S.H. Chan
Keyword(s):
High Field
◽
Low Frequency
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Frequency Noise
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Low Frequency Noise
◽
Noise Characterization
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In depth static and low-frequency noise characterization of n-channel FinFETs on SOI substrates at cryogenic temperature
Solid-State Electronics
◽
10.1016/j.sse.2014.04.001
◽
2014
◽
Vol 98
◽
pp. 12-19
◽
Cited By ~ 8
Author(s):
H. Achour
◽
B. Cretu
◽
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R. Carin
◽
R. Talmat
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...
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Cryogenic Temperature
◽
Low Frequency
◽
Frequency Noise
◽
Low Frequency Noise
◽
Noise Characterization
◽
Soi Substrates
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Dynamic and low-frequency noise characterization of si-ge heterojunction-bipolar transistors at cryogenic temperatures
IEEE Transactions on Nuclear Science
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10.1109/tns.2003.814590
◽
2003
◽
Vol 50
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◽
pp. 921-927
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Cited By ~ 4
Author(s):
C. Arnaboldi
◽
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Keyword(s):
Heterojunction Bipolar Transistors
◽
Low Frequency
◽
Bipolar Transistors
◽
Frequency Noise
◽
Cryogenic Temperatures
◽
Low Frequency Noise
◽
Noise Characterization
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Low-frequency noise characterization of n- and p-MOSFET's with ultrathin oxynitride gate films
IEEE Electron Device Letters
◽
10.1109/55.511586
◽
1996
◽
Vol 17
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pp. 395-397
◽
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Author(s):
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◽
G. Ghibaudo
◽
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◽
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◽
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◽
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Low Frequency
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Frequency Noise
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DC and low-frequency-noise characterization of epitaxially grown raised-emitter SiGe HBTs
Thin Solid Films
◽
10.1016/j.tsf.2008.08.020
◽
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◽
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◽
pp. 6-9
◽
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Low Frequency
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Low-Frequency Noise Characterization of Ultra-Low Equivalent-Oxide-Thickness Thulium Silicate Interfacial Layer nMOSFETs
IEEE Electron Device Letters
◽
10.1109/led.2015.2494678
◽
2015
◽
Vol 36
(12)
◽
pp. 1355-1358
◽
Cited By ~ 1
Author(s):
Maryam Olyaei
◽
Eugenio Dentoni Litta
◽
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◽
Mikael Ostling
◽
Bengt Gunnar Malm
Keyword(s):
Interfacial Layer
◽
Low Frequency
◽
Oxide Thickness
◽
Frequency Noise
◽
Equivalent Oxide Thickness
◽
Low Frequency Noise
◽
Noise Characterization
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Static and low frequency noise characterization of n-channel 16 nm UTBOX devices
2016 7th International Conference on Sciences of Electronics, Technologies of Information and Telecommunications (SETIT)
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10.1109/setit.2016.7939833
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2016
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Author(s):
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◽
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◽
O. Touayar
◽
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Static and low frequency noise characterization of ultra-thin body InAs MOSFETs
Solid-State Electronics
◽
10.1016/j.sse.2017.12.001
◽
2018
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Vol 143
◽
pp. 56-61
◽
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◽
M. Pastorek
◽
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◽
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◽
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◽
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Keyword(s):
Low Frequency
◽
Thin Body
◽
Frequency Noise
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Low Frequency Noise
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