The Fifth International Conference on Advanced Semiconductor Devices and Microsystems, 2004. ASDAM 2004.

2005 ◽

Author(s):

M. Morvic ◽

J. Betko

Keyword(s):

Hall Effect ◽

Planar Hall Effect ◽

Hall Sensors

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Processing of low frequency analog signals from capacitive sensors

The Fifth International Conference on Advanced Semiconductor Devices and Microsystems, 2004. ASDAM 2004. ◽

10.1109/asdam.2004.1441219 ◽

2005 ◽

Author(s):

J. Foit

Keyword(s):

Low Frequency ◽

Capacitive Sensors ◽

Analog Signals

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Characterization of high-resistivity polycrystalline silicon substrates for wafer-level packaging and integration of RF passives

The Fifth International Conference on Advanced Semiconductor Devices and Microsystems, 2004. ASDAM 2004. ◽

10.1109/asdam.2004.1441202 ◽

2005 ◽

Cited By ~ 1

Author(s):

M. Bartek ◽

A. Polyakov ◽

S.M. Sinaga ◽

P.M. Mendes ◽

J.H. Correia ◽

...

Keyword(s):

Polycrystalline Silicon ◽

High Resistivity ◽

Silicon Substrates ◽

Wafer Level ◽

Wafer Level Packaging

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Generation of THz radiation by photomixing in low-temperature-grown MBE GaAs

The Fifth International Conference on Advanced Semiconductor Devices and Microsystems, 2004. ASDAM 2004. ◽

10.1109/asdam.2004.1441203 ◽

2005 ◽

Author(s):

M. Mikulics ◽

I. Camara ◽

M. Marso ◽

A. van der Hart ◽

A. Fox ◽

...

Keyword(s):

Low Temperature ◽

Thz Radiation

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Frequency characteristic of the capacitive coupling in CMOS integrated circuits

The Fifth International Conference on Advanced Semiconductor Devices and Microsystems, 2004. ASDAM 2004. ◽

10.1109/asdam.2004.1441212 ◽

2005 ◽

Author(s):

J. Novak ◽

J. Foit ◽

V. Janicek

Keyword(s):

Integrated Circuits ◽

Frequency Characteristic ◽

Capacitive Coupling ◽

Cmos Integrated Circuits

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Utilization of InGaAsP charge layer in InGaAs/InP SACM APD

The Fifth International Conference on Advanced Semiconductor Devices and Microsystems, 2004. ASDAM 2004. ◽

10.1109/asdam.2004.1441146 ◽

2005 ◽

Author(s):

D. Hasko ◽

F. Uherek ◽

J. Kovac ◽

J. Jakabovic ◽

J. Skriniarova ◽

...

Keyword(s):

Charge Layer

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Analysis of the electrical and thermal properties of power DMOS devices during UIS supported by 2 - D process and device simulation

The Fifth International Conference on Advanced Semiconductor Devices and Microsystems, 2004. ASDAM 2004. ◽

10.1109/asdam.2004.1441198 ◽

2005 ◽

Cited By ~ 1

Author(s):

D. Donoval ◽

A. Vrbicky

Keyword(s):

Thermal Properties ◽

Device Simulation

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Smooth GaN recess wet photoelectrochemical etching

The Fifth International Conference on Advanced Semiconductor Devices and Microsystems, 2004. ASDAM 2004. ◽

10.1109/asdam.2004.1441194 ◽

2005 ◽

Author(s):

D. Gregusova ◽

J. Novak ◽

H. Hardtdegen ◽

J. Soltys ◽

I. Kostic ◽

...

Keyword(s):

Photoelectrochemical Etching

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Removal of oxide ions from ruthenium oxide films by pill injection of nitrogen

The Fifth International Conference on Advanced Semiconductor Devices and Microsystems, 2004. ASDAM 2004. ◽

10.1109/asdam.2004.1441176 ◽

2005 ◽

Author(s):

D. Buc ◽

I. Bello ◽

M. Mikula ◽

D.T.K. Kwok ◽

P.K. Chu ◽

...

Keyword(s):

Oxide Films ◽

Ruthenium Oxide ◽

Oxide Ions

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Extracting of silicon carbide schottky diode model parameters using lateral optimization method including the parallel conductance

The Fifth International Conference on Advanced Semiconductor Devices and Microsystems, 2004. ASDAM 2004. ◽

10.1109/asdam.2004.1441213 ◽

2005 ◽

Cited By ~ 3

Author(s):

Z. Ouennoughi ◽

R. Weiss ◽

S. Benlala ◽

H. Ryssel

Keyword(s):

Silicon Carbide ◽

Schottky Diode ◽

Optimization Method ◽

Model Parameters ◽

Parallel Conductance

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The Fifth International Conference on Advanced Semiconductor Devices and Microsystems, 2004. ASDAM 2004.
Latest Publications

TOTAL DOCUMENTS

H-INDEX

Published By IEEE

Planar hall effect and inagnetoresistance in hall sensors

Processing of low frequency analog signals from capacitive sensors

Characterization of high-resistivity polycrystalline silicon substrates for wafer-level packaging and integration of RF passives

Generation of THz radiation by photomixing in low-temperature-grown MBE GaAs

Frequency characteristic of the capacitive coupling in CMOS integrated circuits

Utilization of InGaAsP charge layer in InGaAs/InP SACM APD

Analysis of the electrical and thermal properties of power DMOS devices during UIS supported by 2 - D process and device simulation

Smooth GaN recess wet photoelectrochemical etching

Removal of oxide ions from ruthenium oxide films by pill injection of nitrogen

Extracting of silicon carbide schottky diode model parameters using lateral optimization method including the parallel conductance

Export Citation Format

The Fifth International Conference on Advanced Semiconductor Devices and Microsystems, 2004. ASDAM 2004.Latest Publications

TOTAL DOCUMENTS

H-INDEX

Published By IEEE

Planar hall effect and inagnetoresistance in hall sensors

Processing of low frequency analog signals from capacitive sensors

Characterization of high-resistivity polycrystalline silicon substrates for wafer-level packaging and integration of RF passives

Generation of THz radiation by photomixing in low-temperature-grown MBE GaAs

Frequency characteristic of the capacitive coupling in CMOS integrated circuits

Utilization of InGaAsP charge layer in InGaAs/InP SACM APD

Analysis of the electrical and thermal properties of power DMOS devices during UIS supported by 2 - D process and device simulation

Smooth GaN recess wet photoelectrochemical etching

Removal of oxide ions from ruthenium oxide films by pill injection of nitrogen

Extracting of silicon carbide schottky diode model parameters using lateral optimization method including the parallel conductance

The Fifth International Conference on Advanced Semiconductor Devices and Microsystems, 2004. ASDAM 2004.
Latest Publications