A C-Band Power Amplifier with Over-Neutralization Technique and Coupled-Line MCR Matching Methods for 5G Communication in 0.25-μm GaAs

RF power amplifiers are one of challenging blocks in designing radio frequency transceivers, this is due to non-linearity behavior of power amplifiers that leads to inter-modulation distortion. This paper presents the design of wide-band power amplifier which combined with parallel coupled line band pass filter at the input and output of power amplifier to allow the only required frequency band to pass through the power amplifier. Class-A topology and ATF-511P8 transistor are used in this design. Advanced Design System software used as a simulation tool to simulate the designed wide-band power amplifier. The simulation results showed an input return loss (S11) which less than -10dB, and gain (S21) is higher than 10 dB over the entire frequency band and considers as flat as well. The designed amplifier is stable over the bandwidth (K>1). Inter-modulation distortion is -56.919dBc which is less than -50dBc with 10dBm input power. The designed amplifier can be used for the microwave applications which include weather radar, satellite communication, wireless networking, mobile, and TV.

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A 28/38 GHz Dual-Band Power Amplifier for 5G Communication

IEEE Transactions on Microwave Theory and Techniques ◽

10.1109/tmtt.2021.3134641 ◽

2022 ◽

pp. 1-1

Author(s):

Kaijie Ding ◽

Domine M. W. Leenaerts ◽

Hao Gao

Keyword(s):

Power Amplifier ◽

Dual Band ◽

Band Power ◽

5G Communication

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W-band power amplifier using broadband impedance-transforming coupled line couplers

Microwave and Optical Technology Letters ◽

10.1002/mop.28965 ◽

2015 ◽

Vol 57 (4) ◽

pp. 803-806

Author(s):

Jungsik Kim ◽

Sangho Lee ◽

Seokchul Lee ◽

Wansik Kim ◽

Hosang Kwon ◽

...

Keyword(s):

Power Amplifier ◽

Coupled Line ◽

Band Power ◽

W Band

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Failure Localization in a Multistage S-Band Power Amplifier

ISTFA 2016: Conference Proceedings from the 42nd International Symposium for Testing and Failure Analysis ◽

10.31399/asm.cp.istfa2016p0373 ◽

2016 ◽

Author(s):

Clarence Rebello ◽

Ted Kolasa ◽

Parag Modi

Keyword(s):

Output Power ◽

Power Amplifier ◽

Fault Tree ◽

Root Cause ◽

Failure Investigation ◽

Band Power ◽

Cause Of Failure ◽

Design Materials ◽

Board Level ◽

Failure Localization

Abstract During the search for the root cause of a board level failure, all aspects of the product must be revisited and investigated. These aspects encompass design, materials, and workmanship. In this discussion, the failure investigation involved an S-Band Power Amplifier assembly exhibiting abnormally low RF output power where initial troubleshooting did not provide a clear cause of failure. A detailed fault tree drove investigations that narrowed the focus to a few possible root causes. However, as the investigation progressed, multiple contributors were eventually discovered, some that were not initially considered.

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