<p>The
conductivity and photoconductivity of the <i>p-type</i>
semiconductor rr-P3HT was studied under light-matter strong coupling. The
vacuum Rabi splitting with surface plasmon modes is ca. 1.2 eV corresponding to
54% of the transition energy. In this ultra-strong coupling regime, the conductivity
is enhanced even for such <i>p-type</i>
semiconductor demonstrating that ultra-strong coupling can modify the transport
properties of the valence band. This effect is most easily explained by the
finite photonic content of the polariton ground state under such extreme
coupling conditions. Furthermore, the photoconductivity of rr-P3HT is also
enhanced and show broadened spectral responses due to the formation of the
hybrid polaritonic states. This is the first example of enhanced conductivity and
photoconductivity for a <i>p-type</i>
semiconductor under strong coupling. This illustrates yet again the potential
of engineering the vacuum electromagnetic environment to improve the
opto-electronic properties of materials.
</p>
Quantum emitter interacting with graphene coating in the strong-coupling regime