Determination of shallow defect levels using thermally stimulated current in implant-layer/substrate junctions of GaAs MESFETs

1980 ◽  
Vol 1 (12) ◽  
pp. 253-255 ◽  
Author(s):  
S. Sriram ◽  
M.B. Das
Keyword(s):  
Thermally Stimulated Current ◽  
Shallow Defect ◽  
Defect Levels

Determination of Defect Levels in Melt-Grown All-Inorganic Perovskite CsPbBr3Crystals by Thermally Stimulated Current Spectra

2018 ◽  
Vol 122 (19) ◽  
pp. 10309-10315 ◽  
Author(s):  
Mingzhi Zhang ◽  
Zhiping Zheng ◽  
Qiuyun Fu ◽  
Pengju Guo ◽  
Sen Zhang ◽  
...  
Keyword(s):  
Thermally Stimulated Current ◽  
Inorganic Perovskite ◽  
Defect Levels

Investigation on defect levels in CdZnTe : Al using thermally stimulated current spectroscopy

2010 ◽  
Vol 43 (34) ◽  
pp. 345104 ◽  
Author(s):  
Ruihua Nan ◽  
Wanqi Jie ◽  
Gangqiang Zha ◽  
Tao Wang ◽  
Yadong Xu ◽  
...  
Keyword(s):  
Thermally Stimulated Current ◽  
Thermally Stimulated Current Spectroscopy ◽  
Defect Levels

Contact-Less Electrical Defect Characterization of Semi-Insulating 6H-SiC Bulk Material

2008 ◽  
Vol 600-603 ◽  
pp. 405-408 ◽  
Author(s):  
S. Hahn ◽  
Franziska Christine Beyer ◽  
Andreas Gällström ◽  
Patrick Carlsson ◽  
Anne Henry ◽  
...  
Keyword(s):  
Bulk Material ◽  
Electrical Characterization ◽  
The Novel ◽  
Spatially Resolved ◽  
Peak Assignment ◽  
Shallow Defect ◽  
Defect Levels ◽  
Transient Spectroscopy ◽  
Non Destructive

The novel technique microwave detected photo induced current transient spectroscopy (MD-PICTS) was applied to semi-insulating 6H-SiC in order to investigate the properties of inherent defect levels. Defect spectra can be obtained in the similar way to conventional PICTS and DLTS. However, there is no need for contacting the samples, which allows for non-destructive and spatially resolved electrical characterization. This work is focused on the investigation of semi-insulating 6H-SiC grown under different C/Si-ratios. In the corresponding MD-PICTS spectra several shallow defect levels appear in the low temperature range. However the peak assignment needs further investigation. Additionally different trap reemission dynamics are obtained for higher temperatures, which are supposed to be due to different compensation effects.

Shallow defect levels in neutron‐irradiatedp‐type extrinsic silicon

1979 ◽  
Vol 50 (5) ◽  
pp. 3755-3757 ◽  
Author(s):  
M. H. Young ◽  
O.J. Marsh ◽  
R. Baron
Keyword(s):  
Shallow Defect ◽  
Defect Levels
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