Фотофизические свойства тонких пленок перилена, модифицированного функциональными группами диангидрида и диимида тетракарбоновой кислоты

The morphology of organic semiconductor films of perylenetetracarboxylic acid dianhydride (PTCDA) and perylenetetracarboxylic acid dibenzyl-diimide (N, N`-DBPTCDI) formed by thermal vacuum deposition was studied by atomic force microscopy. It was shown that annealing of films at 420 K leads to rearrangement of their structure and crystallization. The optical absorption spectra of the films under study were used to estimate the optical band gap. The temperature dependence of the dark conductivity of PTCDA and N, N-DBPTCDI films before and after annealing (Т = 420 K) was established. The values of the activation energy of charge carrier traps are determined. The computer simulation of the density of localized states in the band gap of the films studied was carried out using the photoconductivity spectra in the constant photocurrent mode. Model photovoltaic cells based on PTCDA / СuPc and N, N-DBPTCDI / СuPc structures were formed. The kinetics of decay of the interfacial photo-voltage of the cells prepared was measured using pulsed light as an excitation source. On the basis of the performed measurements, the charge carrier mobility values in the investigated semiconductor materials were estimated.

Photoluminescence properties of cuprous phosphide prepared through phosphating copper with a native oxide layer

The presence of cuprous oxide results in band bending at the interface between cuprous phosphide and cuprous oxide, forming carrier traps, which improves the fluorescence properties of cuprous phosphide.

Efficient and Stable Wide Bandgap Perovskite Solar Cells through Surface Passivation with Long Alkyl Chain Organic Cations

Defects on perovskite surfaces acting as charge-carrier-traps are a key factor limiting the performance of perovskite solar cells (PSCs). Here we studied the defect passivation effect of three bromide-containing alkylammonium...

Effect of sPP Content on Electrical Tree Growth Characteristics in PP-Blended Cable Insulation

This paper aims at investigating the electrical tree characteristics of isotactic polypropylene (iPP)/syndiotactic polypropylene (sPP) blends for thermoplastic cable insulation. PP blended samples with sPP contents of 0, 5, 15, 30, and 45 wt% are prepared, and electrical treeing experiments are implemented under alternating current (AC) voltage at 50, 70, and 90 °C. Experimental results show that with the incorporation of sPP increasing to 15 wt%, the inception time of electrical tree increases by 8.2%. The addition of sPP by 15% distinguishes an excellent performance in inhibiting electrical treeing, which benefits from the ability to promote the fractal dimension and lateral growth of branches. Further increase in sPP loading has a negative effect on the electrical treeing resistance of blended insulation. It is proved by DSC and POM that the addition of sPP promotes the heterogeneous crystallization the of PP matrix, resulting in an increasing density of interfacial regions between crystalline regions, which contains charge carrier traps. Charges injected from an electrode into a polymer are captured by deep traps at the interfacial regions, thus inhibiting the propagation of electrical tree. It is concluded that the modification of crystalline morphology by 15 wt% sPP addition has a great advantage in electrical treeing resistance for PP-based cable insulation.