Investigation on defect levels in CdZnTe : Al using thermally stimulated current spectroscopy

2010 ◽  
Vol 43 (34) ◽  
pp. 345104 ◽  
Author(s):  
Ruihua Nan ◽  
Wanqi Jie ◽  
Gangqiang Zha ◽  
Tao Wang ◽  
Yadong Xu ◽  
...  
Keyword(s):  
Thermally Stimulated Current ◽  
Thermally Stimulated Current Spectroscopy ◽  
Defect Levels

Investigation of Deep Level Defects in Mercuric Iodide by Thermally Stimulated Current Spectroscopy

1990 ◽  
Vol 209 ◽  
Author(s):  
X.J. Bao ◽  
T.E. Schlesinger ◽  
R.B. James ◽  
A.Y. Cheng ◽  
C. Olrtale ◽  
...  
Keyword(s):  
Single Crystals ◽  
Deep Level ◽  
Metal Contacts ◽  
Mercuric Iodide ◽  
Heating Rates ◽  
Thermally Stimulated Current ◽  
Depolarization Current ◽  
Pyroelectric Effect ◽  
Thermally Stimulated Current Spectroscopy ◽  
Defect Levels

ABSTRACTMercuric iodide (HgI2) single crystals deposited with semitransparent Pd, Al and Ag contacts were studied by thermally stimulated current spectroscopy (TSC). Distinct differences were found among spectra obtained friom samples withdifferentmetal contacts, indicating that interactions between the metal contacts and mercuric iodide substrates have strong effects on the deep defect levels in mercuric iodide. The activation energies of some of these defect levels were estimated bytaking TSC spectra with different heating rates. In addition, a pyroelectric effect was observed in Ag-contactedsamplesbythermally stimulated depolarization current technique (TSDC). The implications of these results in device applicationsof mercuric iodide are discussed.

Deep States in GaN Studied by Thermally Stimulated Current Spectroscopy

1995 ◽  
Vol 395 ◽  
Author(s):  
Z.C. Huang ◽  
J.C. Chen ◽  
D.B. Mott
Keyword(s):  
Vapor Deposition ◽  
Metalorganic Chemical Vapor Deposition ◽  
Surface States ◽  
Chemical Vapor ◽  
Deep Levels ◽  
Band Edge ◽  
Conduction Band Edge ◽  
Thermally Stimulated Current ◽  
Furnace Annealing ◽  
Thermally Stimulated Current Spectroscopy

ABSTRACTDeep levels in insulating GaN grown by metalorganic chemical vapor deposition have been studied using thermally stimulated current (TSC) and photocurrent (PC) spectroscopies. Five main traps were observed by TSC measurement in the as-grown undoped GaN in the range of 0-0.75 eV below the conduction band edge or above the valence band edge. Their activation energies were 0.11, 0.24, 0.36, 0.53 and 0.62 eV, respectively. PC measurements showed three deep levels located within the bandgap at 1.32, 1.70 and 2.36 eV, respectively. Furnace annealing was carried out on GaN for identifying all the observed deep levels. We have found that the 0.24, 0.36 and 0.53 eV traps were eliminated by annealing at 1000°C under N2for six hours, whereas the 0.62 eV trap density increased after annealing. The three deep levels detected by the PC measurement were not affected by annealing. The 1.70 eV trap, which is located at the midgap, does not seem to compensate with narrow donors. We attribute the 0.11 eV trap to surface states, and the 0.62 eV trap to nitrogen vacancies.

Determination of Defect Levels in Melt-Grown All-Inorganic Perovskite CsPbBr3Crystals by Thermally Stimulated Current Spectra

2018 ◽  
Vol 122 (19) ◽  
pp. 10309-10315 ◽  
Author(s):  
Mingzhi Zhang ◽  
Zhiping Zheng ◽  
Qiuyun Fu ◽  
Pengju Guo ◽  
Sen Zhang ◽  
...  
Keyword(s):  
Thermally Stimulated Current ◽  
Inorganic Perovskite ◽  
Defect Levels
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