Coupled line negative group delay circuits with very low signal attenuation and multiple-poles characteristics

2014 ◽  
Author(s):  
Girdhari Chaudhary ◽  
Phirun Kim ◽  
Jaeyeon Kim ◽  
Yongchae Jeong ◽  
Jongsik Lim
Keyword(s):  
Group Delay ◽  
Negative Group ◽  
Signal Attenuation ◽  
Coupled Line ◽  
Multiple Poles ◽  
Negative Group Delay

scholarly journals Dual-Band Negative Group Delay Microwave Circuit With Low Signal Attenuation and Arbitrary Frequency Ratio

IEEE Access ◽  
2020 ◽  
Vol 8 ◽  
pp. 49908-49919 ◽  
Author(s):  
Yuwei Meng ◽  
Zhongbao Wang ◽  
Shaojun Fang ◽  
Te Shao ◽  
Hongmei Liu ◽  
...  
Keyword(s):  
Frequency Ratio ◽  
Group Delay ◽  
Dual Band ◽  
Microwave Circuit ◽  
Negative Group ◽  
Signal Attenuation ◽  
Arbitrary Frequency ◽  
Negative Group Delay

scholarly journals Reconfigurable Negative Group Delay Circuit with a Low Insertion Loss Using a Coupled Line

2020 ◽  
Vol 20 (1) ◽  
pp. 73-79
Author(s):  
Girdhari Chaudhary ◽  
Yongchae Jeong
Keyword(s):  
Insertion Loss ◽  
Group Delay ◽  
Characteristic Impedance ◽  
Center Frequency ◽  
Pin Diode ◽  
Negative Group ◽  
Coupled Line ◽  
Coupled Lines ◽  
Low Insertion Loss ◽  
Negative Group Delay

This paper presents a design of a transmissive-type, low insertion loss (IL) negative group delay (NGD) circuit with a reconfigurable NGD. The proposed circuit consists of a series transmission lines (TLs) and shunt short-circuited coupled lines where an isolation port is terminated with a parasitic compensated PIN diode. Analytical design equations are derived to obtain the circuit parameters for the predefined NGD and IL. The low IL can be achieved because of the very high characteristic impedance of the short-circuited coupled lines. The TL terminated with a PIN diode is used to achieve the constant center frequency of reconfigurable NGD circuit. For experimental validation, the NGD circuit is designed and fabricated at a center frequency (<i>f</i><sub>0</sub>) of 2.14 GHz. In the measurement, the NGD varies from -0.5 ns to -2 ns with an IL variation of 2.08 to 3.60 dB at <i>f</i><sub>0</sub> = 2.14 GHz. The NGD bandwidth (bandwidth of GD less than 0 ns) varies from 90 MHz to 50 MHz. The minimum input/output return losses are higher than 10 dB for the overall tuning range.

scholarly journals Realization of Negative Group Delay Network Using Defected Microstrip Structure

2014 ◽  
Vol 2014 ◽  
pp. 1-5
Author(s):  
Girdhari Chaudhary ◽  
Yongchae Jeong ◽  
Jongsik Lim
Keyword(s):  
Insertion Loss ◽  
Experimental Validation ◽  
Group Delay ◽  
Negative Group ◽  
Signal Attenuation ◽  
External Resistor ◽  
Lumped Elements ◽  
Attenuation Characteristics ◽  
Microstrip Structure ◽  
Negative Group Delay

A design of negative group delay (NGD) networks using a U-shaped defected microstrip structure (DMS) and lumped elements is presented in this paper. The signal attenuation characteristics of DMS were utilized to get NGD time. The group delay (GD) time and signal attenuation of the proposed networks are controlled by an external resistor connected across the DMS slot. For experimental validation, a single-stage and cascaded two-stage NGD networks were designed and fabricated. From experimental results, the GD of-8.24±1.1 ns with the maximum insertion loss of 37.84 dB was obtained over bandwidth of 40 MHz.

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