High linearity active GaN-HEMT down-converter MMIC for E-band radar applications

2014 ◽  
Author(s):  
I. Kallfass ◽  
G. Eren ◽  
R. Weber ◽  
S. Wagner ◽  
D. Schwantuschke ◽  
...  
Keyword(s):  
Gan Hemt ◽  
High Linearity ◽  
Radar Applications

High Linearity Ka-band GaN Hemt Low Noise Amplifier

2021 ◽  
Author(s):  
Ji-Seung Seo ◽  
Ji-Hye Hwang ◽  
Ki-Jin Kim ◽  
Gwang-Ho Ahn
Keyword(s):  
Low Noise ◽  
Low Noise Amplifier ◽  
Ka Band ◽  
Gan Hemt ◽  
High Linearity ◽  
Noise Amplifier

An 8.5–10.0 GHz 310 W GaN HEMT for radar applications

2014 ◽  
Author(s):  
Ken Kikuchi ◽  
Makoto Nishihara ◽  
Hiroshi Yamamoto ◽  
Takashi Yamamoto ◽  
Shinya Mizuno ◽  
...  
Keyword(s):  
Gan Hemt ◽  
Radar Applications

HIGH LINEARITY GaN HEMT POWER AMPLIFIER WITH PRE-LINEARIZATION GATE DIODE

2004 ◽  
Vol 14 (03) ◽  
pp. 847-852 ◽  
Author(s):  
SHOUXUAN XIE ◽  
VAMSI PAIDI ◽  
STEN HEIKMAN ◽  
LIKUN SHEN ◽  
ALESSANDRO CHINI ◽  
...  
Keyword(s):  
Power Amplifier ◽  
Rf Power ◽  
Input Capacitance ◽  
Rf Power Amplifier ◽  
Gan Hemt ◽  
High Linearity ◽  
Nonlinear Input ◽  
Class B ◽  
Useful Power ◽  
The One

A high linearity MMIC RF power amplifier is reported in the AlGaN/GaN HEMT technology. In order to obtain high linearity, a pre-linearization gate diode is added at the input to compensate for the nonlinear input capacitance C gs of the GaN HEMT device. Another single-ended Class B power amplifier without the gate diode is also designed for comparison. The circuit with the pre-linearization gate diode demonstrates at least 4dB improvement on 3rd order intermodulation distortion (IMD3) performance over the one without the diode over the useful power range in two-tone measurement.

High-linearity class B power amplifiers in GaN HEMT technology

2003 ◽  
Vol 13 (7) ◽  
pp. 284-286 ◽  
Author(s):  
Shouxuan Xie ◽  
V. Paidi ◽  
R. Coffie ◽  
S. Keller ◽  
S. Heikman ◽  
...  
Keyword(s):  
Power Amplifiers ◽  
Gan Hemt ◽  
High Linearity ◽  
Class B

scholarly journals DESIGN OF BROADBAND, HIGH-EFFICIENCY, AND HIGH-LINEARITY GAN HEMT CLASS-J RF POWER AMPLIFIER

2017 ◽  
Vol 72 ◽  
pp. 177-186 ◽  
Author(s):  
Seyed Alireza Mohadeskasaei ◽  
Fuhong Lin ◽  
Xianwei Zhou ◽  
Sani Umar Abdullahi ◽  
Abdurahman Ahmat
Keyword(s):  
Power Amplifier ◽  
High Efficiency ◽  
Rf Power ◽  
Rf Power Amplifier ◽  
Gan Hemt ◽  
High Linearity
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