Proceedings. IEEE Lester Eastman Conference on High Performance Devices, 2004.
Latest Publications

TOTAL DOCUMENTS

57

(FIVE YEARS 0)

H-INDEX

3

(FIVE YEARS 0)

Published By IEEE

981256196x

Latest Documents Most Cited Documents Contributed Authors Related Sources Related Keywords

Noise and thz rectification characteristics of zero-bias quantum tunneling sb-heterostructure diodes

Proceedings. IEEE Lester Eastman Conference on High Performance Devices, 2004. ◽

10.1109/lechpd.2004.1549669 ◽

2005 ◽

Author(s):

A. Luukanen ◽

E.N. Grossman ◽

H.P. Moyer ◽

J.N. Schulman

Keyword(s):

Quantum Tunneling ◽

Download Full-text

A new field-plated GaN HEMT structure with improved power and noise performance

Proceedings. IEEE Lester Eastman Conference on High Performance Devices, 2004. ◽

10.1109/lechpd.2004.1549692 ◽

2005 ◽

Author(s):

Hongtao Xu ◽

C. Sanabria ◽

A. Chini ◽

Yun Wei ◽

S. Heikman ◽

...

Keyword(s):

Noise Performance ◽

Gan Hemt ◽

Download Full-text

Photocapacitance of gaas thin-film structures fabricated on a semi-insulating compensated substrate

Proceedings. IEEE Lester Eastman Conference on High Performance Devices, 2004. ◽

10.1109/lechpd.2004.1549687 ◽

2005 ◽

Author(s):

N.B. Gorev ◽

I.F. Kodzhespirova ◽

E.N. Privalov ◽

N. Khuchua ◽

L. Khvedelidze ◽

...

Keyword(s):

Download Full-text

Native defect compensation in III-antimonide bulk substrates

Proceedings. IEEE Lester Eastman Conference on High Performance Devices, 2004. ◽

10.1109/lechpd.2004.1549668 ◽

2005 ◽

Author(s):

R. Pino ◽

Youngok Ko ◽

P.S. Dutta

Keyword(s):

Download Full-text

High linearity GaN HEMT power amplifier with pre-linearization gate diode

Proceedings. IEEE Lester Eastman Conference on High Performance Devices, 2004. ◽

10.1109/lechpd.2004.1549698 ◽

2005 ◽

Author(s):

Shouxuan Xie ◽

V. Paidi ◽

S. Heikman ◽

Likun Shen ◽

A. Chini ◽

...

Keyword(s):

Power Amplifier ◽

Gan Hemt ◽

Download Full-text

Low frequency noise parameters in an AlGaN/GaN heterostructure with 33% and 75% Al mole fraction

Proceedings. IEEE Lester Eastman Conference on High Performance Devices, 2004. ◽

10.1109/lechpd.2004.1549685 ◽

2005 ◽

Author(s):

S.A. Vitusevich ◽

S.V. Danylyuk ◽

N. Klein ◽

M.V. Petrychuk ◽

A. Vertiatchikh ◽

...

Keyword(s):

Mole Fraction ◽

Low Frequency ◽

Frequency Noise ◽

Low Frequency Noise ◽

Noise Parameters ◽

Gan Heterostructure

Download Full-text

Stable high power GaN-ON-GaN HEMT

Proceedings. IEEE Lester Eastman Conference on High Performance Devices, 2004. ◽

10.1109/lechpd.2004.1549681 ◽

2005 ◽

Author(s):

K.K. Chu ◽

P.C. Chao ◽

J.A. Windyka

Keyword(s):

Download Full-text

Lifetime of nonequilibrium carriers in AlGaN epilayers with high Al molar fraction

Proceedings. IEEE Lester Eastman Conference on High Performance Devices, 2004. ◽

10.1109/lechpd.2004.1549674 ◽

2005 ◽

Author(s):

J. Mickevicius ◽

R. Aleksiejunas ◽

M.S. Shur ◽

J.P. Zhang ◽

Q. Fareed ◽

...

Keyword(s):

Molar Fraction ◽

Nonequilibrium Carriers

Download Full-text

Analysis of GaN HBT structures for high power, high efficiency microwave amplifiers

Proceedings. IEEE Lester Eastman Conference on High Performance Devices, 2004. ◽

10.1109/lechpd.2004.1549696 ◽

2005 ◽

Author(s):

D.M. Keogh ◽

J.C. Li ◽

A.M. Conway ◽

D. Qiao ◽

S. Raychaudhuri ◽

...

Keyword(s):

High Efficiency ◽

Microwave Amplifiers

Download Full-text

Analysis of high DC current gain structures for GaN/InGaN/GaN HBTs

Proceedings. IEEE Lester Eastman Conference on High Performance Devices, 2004. ◽

10.1109/lechpd.2004.1549695 ◽

2005 ◽

Author(s):

J.C. Li ◽

D.M. Keogh ◽

S. Raychaudhuri ◽

A. Conway ◽

Dongjiang Qiao ◽

...

Keyword(s):

Current Gain ◽

Download Full-text