input capacitance
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Author(s):  
Aleksey Bogachev ◽  
Sergey Shumarin

The results of modeling a circuit of an amplifier with a small input capacitance used as an active probe of an oscilloscope are presented.



Electronics ◽  
2021 ◽  
Vol 10 (11) ◽  
pp. 1312
Author(s):  
Ratil H. Ashique ◽  
ASM Shihavuddin ◽  
Mohammad Monirujjaman Khan ◽  
Aminul Islam ◽  
Jubaer Ahmed ◽  
...  

This paper presents an analysis and modeling of the class-E inverter for ZVS/ZVDS execution at any duty ratio. The methodology is to determine the input current to the inverter analytically under the assumption that it always remains positive. The latter is ensured by proper selection of the input inductance such that the inverter always operates either in (1) the border condition mode or in (2) the continuous conduction mode regardless of the input ripple. Using this input current and applying the boundary conditions, the required input capacitance for the ZVS/ZVDS execution is determined at a specified input/output voltage, output power and load. The analysis shows that the ZVS/ZVDS can be achieved while the input capacitance is selected appropriately. A comparison between the analytical and simulation results is also formulated involving the proposed and other existing models. The simulation results that are provided at different duty ratios demonstrate that they are in a better agreement with the proposed analytical model regardless of the input inductance and the state of input ripple current. The analytical modeling is facilitated by using MAPLE®.



2021 ◽  
Vol 11 (1) ◽  
Author(s):  
Mohammad Alibakhshikenari ◽  
Bal S. Virdee ◽  
Ayman A. Althuwayb ◽  
Leyre Azpilicueta ◽  
Naser Ojaroudi Parchin ◽  
...  

AbstractThe paper demonstrates an effective technique to significantly enhance the bandwidth and radiation gain of an otherwise narrowband composite right/left-handed transmission-line (CRLH-TL) antenna using a non-Foster impedance matching circuit (NF-IMC) without affecting the antenna’s stability. This is achieved by using the negative reactance of the NF-IMC to counteract the input capacitance of the antenna. Series capacitance of the CRLH-TL unit-cell is created by etching a dielectric spiral slot inside a rectangular microstrip patch that is grounded through a spiraled microstrip inductance. The overall size of the antenna, including the NF-IMC at its lowest operating frequency is 0.335λ0 × 0.137λ0 × 0.003λ0, where λ0 is the free-space wavelength at 1.4 GHz. The performance of the antenna was verified through actual measurements. The stable bandwidth of the antenna for |S11|≤ − 18 dB is greater than 1 GHz (1.4–2.45 GHz), which is significantly wider than the CRLH-TL antenna without the proposed impedance matching circuit. In addition, with the proposed technique the measured radiation gain and efficiency of the antenna are increased on average by 3.2 dBi and 31.5% over the operating frequency band.



Electronics ◽  
2020 ◽  
Vol 9 (11) ◽  
pp. 1895
Author(s):  
Jinhee Cheon ◽  
Kwangsoo Kim

In this paper, we compare the static and switching characteristics of the 4H-SiC conventional UMOSFET (C-UMOSFET), double trench MOSFET (DT-MOSFET) and source trench MOSFET (ST-MOSFET) through TCAD simulation. In particular, the effect of the trenched source region and the gate trench bottom P+ shielding region on the capacitance is analyzed, and the dynamic characteristics of the three structures are compared. The input capacitance is almost identical in all three structures. On the other hand, the reverse transfer capacitance of DT-MOSFET and ST-MOSFET is reduced by 44% and 24%, respectively, compared to C-UMOSFET. Since the reverse transfer capacitance of DT-MOSFET and ST-MOSFET is superior to that of C-UMOSFET, it improves high frequency figure of merit (HF-FOM: RON-SP × QGD). The HF-FOM of DT-MOSFET and ST-MOSFET is 289 mΩ∙nC, 224 mΩ∙nC, respectively, which is improved by 26% and 42% compared to C-UMOSFET. The switching speed of DT-MOSFET and ST-MOSFET are maintained at the same level as the C-UMOSFET. The switching energy loss and power loss of the DT-MOSFET and ST-MOSFET are slightly improved compared to C-UMOSFET.







Sensors ◽  
2019 ◽  
Vol 19 (20) ◽  
pp. 4572 ◽  
Author(s):  
Seungchan Lee ◽  
Younghak Shin ◽  
Anil Kumar ◽  
Kiseon Kim ◽  
Heung-No Lee

Dry contact electrode-based EEG acquisition is one of the easiest ways to obtain neural information from the human brain, providing many advantages such as rapid installation, and enhanced wearability. However, high contact impedance due to insufficient electrical coupling at the electrode-scalp interface still remains a critical issue. In this paper, a two-wired active dry electrode system is proposed by combining finger-shaped spring-loaded probes and active buffer circuits. The shrinkable probes and bootstrap topology-based buffer circuitry provide reliable electrical coupling with an uneven and hairy scalp and effective input impedance conversion along with low input capacitance. Through analysis of the equivalent circuit model, the proposed electrode was carefully designed by employing off-the-shelf discrete components and a low-noise zero-drift amplifier. Several electrical evaluations such as noise spectral density measurements and input capacitance estimation were performed together with simple experiments for alpha rhythm detection. The experimental results showed that the proposed electrode is capable of clear detection for the alpha rhythm activation, with excellent electrical characteristics such as low-noise of 1.131 μVRMS and 32.3% reduction of input capacitance.





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