HIGH LINEARITY GaN HEMT POWER AMPLIFIER WITH PRE-LINEARIZATION GATE DIODE

2004 ◽  
Vol 14 (03) ◽  
pp. 847-852 ◽  
Author(s):  
SHOUXUAN XIE ◽  
VAMSI PAIDI ◽  
STEN HEIKMAN ◽  
LIKUN SHEN ◽  
ALESSANDRO CHINI ◽  
...  
Keyword(s):  
Power Amplifier ◽  
Rf Power ◽  
Input Capacitance ◽  
Rf Power Amplifier ◽  
Gan Hemt ◽  
High Linearity ◽  
Nonlinear Input ◽  
Class B ◽  
Useful Power ◽  
The One

A high linearity MMIC RF power amplifier is reported in the AlGaN/GaN HEMT technology. In order to obtain high linearity, a pre-linearization gate diode is added at the input to compensate for the nonlinear input capacitance C gs of the GaN HEMT device. Another single-ended Class B power amplifier without the gate diode is also designed for comparison. The circuit with the pre-linearization gate diode demonstrates at least 4dB improvement on 3rd order intermodulation distortion (IMD3) performance over the one without the diode over the useful power range in two-tone measurement.

scholarly journals DESIGN OF BROADBAND, HIGH-EFFICIENCY, AND HIGH-LINEARITY GAN HEMT CLASS-J RF POWER AMPLIFIER

2017 ◽  
Vol 72 ◽  
pp. 177-186 ◽  
Author(s):  
Seyed Alireza Mohadeskasaei ◽  
Fuhong Lin ◽  
Xianwei Zhou ◽  
Sani Umar Abdullahi ◽  
Abdurahman Ahmat
Keyword(s):  
Power Amplifier ◽  
High Efficiency ◽  
Rf Power ◽  
Rf Power Amplifier ◽  
Gan Hemt ◽  
High Linearity

scholarly journals A high-linearity SiGe RF power amplifier for 3 G and 4 G small basestations

2012 ◽  
Vol 99 (8) ◽  
pp. 1145-1153 ◽  
Author(s):  
Ted Johansson ◽  
Noora Solati ◽  
Jonas Fritzin
Keyword(s):  
Power Amplifier ◽  
Rf Power ◽  
Rf Power Amplifier ◽  
High Linearity

scholarly journals 0.5 GHz-1.5 GHz Bandwidth 10W GaN HEMT RF Power Amplifier Design

2018 ◽  
Vol 8 (3) ◽  
pp. 1837
Author(s):  
Shiva Ghandi Isma Ilamaran ◽  
Zubaida Yusoff ◽  
Jahariah Sampe
Keyword(s):  
Power Amplifier ◽  
Communication Technology ◽  
Rf Power ◽  
Power Added Efficiency ◽  
Rf Power Amplifier ◽  
Gan Hemt ◽  
Input And Output ◽  
Flat Gain ◽  
Amplifier Design ◽  
Load Pull

With the current development in wireless communication technology, the need for a wide bandwith in RF power amplifier (RF PA) is an essential. In this paper, the design and simulation of 10W GaN HEMT wideband RF PA will be presented. The Source-Pull and Load-Pull technique was used to design the input and output matching network of the RF PA. From the simulation, the RF PA achieved a flat gain between 15dB to 17dB from 0.5GHz to 1.5GHz. At 1.5GHz, the drain efficiency is simulated to achieve 36% at the output power of 40 dBm while the power added efficiency (PAE) was found to be 28.2%.

13.56-MHz Class-E RF power amplifier using normally-on GaN HEMT

2014 ◽  
Author(s):  
Masayuki Okamoto ◽  
Toshihiko Tanaka ◽  
Koyo Matuzaki ◽  
Tamotsu Hashizume ◽  
Hiroaki Yamada
Keyword(s):  
Power Amplifier ◽  
Rf Power ◽  
Rf Power Amplifier ◽  
Gan Hemt ◽  
Class E

High efficiency continuous mode RF power amplifier based on second and third harmonic manipulation

2020 ◽  
pp. 1-11
Author(s):  
Firas M. Ali ◽  
Mahmuod H. Al-Muifraje ◽  
Thamir R. Saeed
Keyword(s):  
Power Amplifier ◽  
Mobile Communications ◽  
Maximum Efficiency ◽  
Harmonic Load ◽  
High Electron ◽  
Continuous Mode ◽  
Rf Power ◽  
Third Harmonic ◽  
Rf Power Amplifier ◽  
Class B

Abstract Continuous mode class-J radio-frequency (RF) power amplifier is a promising technique that extends the operating bandwidth of the conventional class-B power amplifier. However, the maximum theoretical efficiency is limited to that of the class-B power amplifier. In this paper, an enhanced mode of operation for the class-J power amplifier is proposed by incorporating a third harmonic voltage component to produce an optimum waveform for maximizing the fundamental voltage component and thereby to increase the drain efficiency and introduce a new design space. A detailed derivation for the necessary relations of output power, drain efficiency, and the required harmonic load impedances is provided, showing a significant improvement in theoretical maximum efficiency from 78.5 to 89.8%. In order to confirm the developed analytic approach, a 10 W prototype amplifier model was designed and fabricated to operate within the global system for mobile communications (GSM) frequency band 850–950 MHz using a commercial GaN power high electron mobility transistor (HEMT). The experimental results have indicated that the drain efficiency of the circuit varies from 68 to 80% within the desired band.

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