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Analytical modelling of the heterojunction bipolar transistor based distributed amplifier
IEEE MTT/ED/AP/LEO Societies Joint Chapter United Kingdom and Republic of Ireland Section 1996 2nd High Frequency Postgraduate Student Colloquium HFPSC-96
◽
10.1109/hfpsc.1996.552452
◽
2005
◽
Cited By ~ 2
Author(s):
A. Iqbal
◽
I.Z. Darwazeh
Keyword(s):
Bipolar Transistor
◽
Heterojunction Bipolar Transistor
◽
Analytical Modelling
◽
Distributed Amplifier
Download Full-text
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Analytical modelling of base transit time and early voltage of InP/InGaAs Heterojunction Bipolar Transistor for nonuniform base doping profile
IEEE Technology Students' Symposium
◽
10.1109/techsym.2011.5783823
◽
2011
◽
Author(s):
S Chowdhury
◽
S Basu
Keyword(s):
Transit Time
◽
Bipolar Transistor
◽
Heterojunction Bipolar Transistor
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Analytical Modelling
◽
Doping Profile
◽
Base Doping
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Modelling of the heterojunction bipolar transistor based distributed amplifier
10.1049/ic:19960705
◽
1996
◽
Cited By ~ 1
Author(s):
A. Iqbal
Keyword(s):
Bipolar Transistor
◽
Heterojunction Bipolar Transistor
◽
Distributed Amplifier
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Analytical modelling of Early voltage and Current Gain of Si1−yGey Heterojunction Bipolar Transistor
2011 International Conference on Electronic Devices, Systems and Applications (ICEDSA)
◽
10.1109/icedsa.2011.5959034
◽
2011
◽
Author(s):
Fazle Rabbi
◽
Yeasir Arafat
◽
M. Ziaur Rahman Khan
Keyword(s):
Bipolar Transistor
◽
Heterojunction Bipolar Transistor
◽
Analytical Modelling
◽
Current Gain
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MICROWAVE POWER GaAs/AlGaAs HETEROJUNCTION BIPOLAR TRANSISTOR MODELLING
Le Journal de Physique Colloques
◽
10.1051/jphyscol:19884122
◽
1988
◽
Vol 49
(C4)
◽
pp. C4-579-C4-582
Author(s):
J. G. METCALFE
◽
R. C. HAYES
◽
A. J. HOLDEN
◽
A. P. LONG
Keyword(s):
Microwave Power
◽
Bipolar Transistor
◽
Heterojunction Bipolar Transistor
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10 Gbit/s AlGaAs/GaAs heterojunction bipolar transistor decision circuit IC
Electronics Letters
◽
10.1049/el:19900084
◽
1990
◽
Vol 26
(2)
◽
pp. 122
◽
Cited By ~ 2
Author(s):
J. Akagi
◽
Y. Kuriyama
◽
K. Morizuka
◽
M. Asaka
◽
K. Tsuda
◽
...
Keyword(s):
Bipolar Transistor
◽
Heterojunction Bipolar Transistor
◽
Decision Circuit
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Using constant base current as a boundary condition for one-dimensional AlGaAs/GaAs heterojunction bipolar transistor simulation
Electronics Letters
◽
10.1049/el:19900964
◽
1990
◽
Vol 26
(18)
◽
pp. 1501
◽
Cited By ~ 8
Author(s):
L.L. Liou
◽
C.I. Huang
Keyword(s):
Boundary Condition
◽
Bipolar Transistor
◽
Heterojunction Bipolar Transistor
◽
One Dimensional
◽
Base Current
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InGaP∕GaAs0.94Sb0.06∕GaAs double heterojunction bipolar transistor
Electronics Letters
◽
10.1049/el:20020201
◽
2002
◽
Vol 38
(6)
◽
pp. 289
◽
Cited By ~ 3
Author(s):
B.P. Yan
◽
C.C. Hsu
◽
X.Q. Wang
◽
E.S. Yang
Keyword(s):
Bipolar Transistor
◽
Heterojunction Bipolar Transistor
◽
Double Heterojunction
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Ballistic two-dimensional lateral heterojunction bipolar transistor
Physical Review Research
◽
10.1103/physrevresearch.3.023158
◽
2021
◽
Vol 3
(2)
◽
Author(s):
Leonardo Lucchesi
◽
Gaetano Calogero
◽
Gianluca Fiori
◽
Giuseppe Iannaccone
Keyword(s):
Bipolar Transistor
◽
Heterojunction Bipolar Transistor
◽
Two Dimensional
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An Accurate Neuro-Space Mapping Method for Heterojunction Bipolar Transistor Modeling
2020 IEEE MTT-S International Conference on Numerical Electromagnetic and Multiphysics Modeling and Optimization (NEMO)
◽
10.1109/nemo49486.2020.9343501
◽
2020
◽
Author(s):
Shuxia Yan
◽
Shuang Zhang
◽
Yaoqian Zhang
◽
Xu Dong
◽
Weiguang Shi
Keyword(s):
Mapping Method
◽
Space Mapping
◽
Bipolar Transistor
◽
Heterojunction Bipolar Transistor
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High-temperature GaN/SiC heterojunction bipolar transistor with high gain
Proceedings of 1994 IEEE International Electron Devices Meeting
◽
10.1109/iedm.1994.383385
◽
2002
◽
Cited By ~ 12
Author(s):
J. Pankove
◽
S.S. Chang
◽
H.C. Lee
◽
R.J. Molnar
◽
T.D. Moustakas
◽
...
Keyword(s):
High Temperature
◽
High Gain
◽
Bipolar Transistor
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Heterojunction Bipolar Transistor
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