Analytical modelling of base transit time and early voltage of InP/InGaAs Heterojunction Bipolar Transistor for nonuniform base doping profile

Analytical Modelling ◽

Doping Profile ◽

A study of the effects of the base doping profile on SiGe heterojunction bipolar transistor performance for all levels of injection

Semiconductor Science and Technology ◽

10.1088/0268-1242/21/4/012 ◽

2006 ◽

Vol 21 (4) ◽

pp. 486-493 ◽

Cited By ~ 8

Author(s):

Gagan Khanduri ◽

Brishbhan Panwar

Keyword(s):

Bipolar Transistor ◽

Doping Profile ◽

On the iterative schemes to obtain base doping profiles for reducing base transit time in a bipolar transistor

IEEE Transactions on Electron Devices ◽

10.1109/16.925251 ◽

2001 ◽

Vol 48 (6) ◽

pp. 1222-1224 ◽

Cited By ~ 13

Author(s):

M. Jagadesh Kumar ◽

V.S. Patri

Keyword(s):

Transit Time ◽

Bipolar Transistor ◽

Iterative Schemes ◽

Doping Profiles ◽

Base transit time of a Heterojunction Bipolar Transistor with Gaussian doped base

International Conference on Electrical & Computer Engineering (ICECE 2010) ◽

10.1109/icelce.2010.5700643 ◽

2010 ◽

Cited By ~ 3

Author(s):

S. M. Moududul Islam ◽

Yeasir Arafat ◽

Iqbal Bahar Chowdhury ◽

M. Ziaur Rahman Khan ◽

M. M. Shahidul Hassan

Keyword(s):

Transit Time ◽

Bipolar Transistor ◽

Heterojunction Bipolar Transistor

2015 International Conference on Electrical Engineering and Information Communication Technology (ICEEICT) ◽

Numerical simulation of Silicon-Germanium Heterojunction Bipolar Transistor (HBT) in silvaco/atlas and analysis of HBT base transit time to achieve faster operation

10.1109/iceeict.2015.7307345 ◽

2015 ◽

Author(s):

Upoma Saha ◽

Fahmi Imteaz ◽

Oishi Prova Saleque ◽

Md. Mehedi Hassan Shohag ◽

Bishwajit Debnath

Keyword(s):

Numerical Simulation ◽

Transit Time ◽

Silicon Germanium ◽

Bipolar Transistor ◽

Silvaco Atlas

2009 IEEE International Conference of Electron Devices and Solid-State Circuits (EDSSC) ◽

Analytical modeling of base transit time for a Si1−yGey heterojunction bipolar transistor

10.1109/edssc.2009.5394245 ◽

2009 ◽

Author(s):

Y. Arafat ◽

M.Z.R. Khan ◽

M.M.S. Hassan

Keyword(s):

Transit Time ◽

Analytical Modeling ◽

Bipolar Transistor ◽

Heterojunction Bipolar Transistor

Effects of Ge profile on thermal characteristics of SiGe heterojunction bipolar transistor with non-uniform doping profile in base region

Acta Physica Sinica ◽

10.7498/aps.62.034401 ◽

2013 ◽

Vol 62 (3) ◽

pp. 034401

Author(s):

Zhang Yu-Jie ◽

Zhang Wan-Rong ◽

Jin Dong-Yue ◽

Chen Liang ◽

Fu Qiang ◽

...

Keyword(s):

Thermal Characteristics ◽

Bipolar Transistor ◽

Doping Profile ◽

Base Region ◽

Uniform Doping

Optimum base doping profile for minimum base transit time

IEEE Transactions on Electron Devices ◽

10.1109/16.83740 ◽

1991 ◽

Vol 38 (9) ◽

pp. 2128-2133 ◽

Cited By ~ 62

Author(s):

K. Suzuki

Keyword(s):

Transit Time ◽

Doping Profile ◽

Base transit time of submicron bipolar transistors including nonuniform base doping profile and high current effects

10.1109/edms.1994.863875 ◽

2005 ◽

Author(s):

J.J. Liou ◽

C.S. Ho

Keyword(s):

Transit Time ◽

Bipolar Transistors ◽

Doping Profile ◽

High Current ◽

IEEE MTT/ED/AP/LEO Societies Joint Chapter United Kingdom and Republic of Ireland Section 1996 2nd High Frequency Postgraduate Student Colloquium HFPSC-96 ◽

Analytical modelling of the heterojunction bipolar transistor based distributed amplifier

10.1109/hfpsc.1996.552452 ◽

2005 ◽

Cited By ~ 2

Author(s):

A. Iqbal ◽

I.Z. Darwazeh

Keyword(s):

Bipolar Transistor ◽

Analytical Modelling ◽

Distributed Amplifier

Determination of the fitting parameters for using uniform emitter and base doping profile in bipolar transistor modeling

Solid-State Electronics ◽

10.1016/0038-1101(94)90124-4 ◽

1994 ◽

Vol 37 (1) ◽

pp. 183-186 ◽

Cited By ~ 1

Author(s):

J.J. Liou ◽

C.S. Ho ◽

A. Kager

Keyword(s):

Bipolar Transistor ◽

Doping Profile ◽

Fitting Parameters ◽