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A broadband high efficiency class AB GaN HEMT balanced power amplifier
2017 8th International Conference on Information Technology (ICIT)
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10.1109/icitech.2017.8079979
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2017
◽
Cited By ~ 3
Author(s):
Waqar Ahmad Malik
◽
Abdel Fatah Ahmed Sheta
◽
Ibrahim Elshafiey
Keyword(s):
Power Amplifier
◽
High Efficiency
◽
Class Ab
◽
Gan Hemt
Download Full-text
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Cited By
References
A High Efficiency 4–18 GHz GaN MMIC Power Amplifier based on 90nm T-gate GaN HEMT Technology
2020 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS)
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10.1109/bcicts48439.2020.9392935
◽
2020
◽
Author(s):
Shuoqi Chen
◽
Vipan Kumar
◽
Yu Cao
Keyword(s):
Power Amplifier
◽
High Efficiency
◽
Gan Hemt
Download Full-text
A High-Efficiency Class F MMIC Power Amplifier at 4.0 GHz Using AlGaN/GaN HEMT Technology
2012 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)
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10.1109/csics.2012.6340065
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2012
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Cited By ~ 2
Author(s):
Valiallah Zomorrodian
◽
Umesh K. Mishra
◽
Robert A. York
Keyword(s):
Power Amplifier
◽
High Efficiency
◽
Gan Hemt
◽
Class F
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Wideband High Efficiency 50 W GaN-HEMT Balanced Power Amplifier
2018 48th European Microwave Conference (EuMC)
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10.23919/eumc.2018.8541379
◽
2018
◽
Author(s):
Quang Huy Le
◽
Gernot Zimmer
Keyword(s):
Power Amplifier
◽
High Efficiency
◽
Gan Hemt
Download Full-text
A 5W class-AB power amplifier based on a GaN HEMT for LTE communication band
2016 16th Mediterranean Microwave Symposium (MMS)
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10.1109/mms.2016.7803827
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2016
◽
Cited By ~ 2
Author(s):
Mustazar Iqbal
◽
Anna Piacibello
Keyword(s):
Power Amplifier
◽
Class Ab
◽
Gan Hemt
Download Full-text
Extraction of accurate GaN HEMT model for high-efficiency power amplifier design
2015 IEEE MTT-S International Microwave Symposium
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10.1109/mwsym.2015.7166866
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2015
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Cited By ~ 2
Author(s):
Valeria Vadala
◽
Antonio Raffo
◽
Gustavo Avolio
◽
Mauro Marchetti
◽
Dominique M.M.-P Schreurs
◽
...
Keyword(s):
Power Amplifier
◽
High Efficiency
◽
Gan Hemt
◽
Amplifier Design
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Design of Class-AB Power Amplifier using GaN HEMT Technology
2018 4th International Conference for Convergence in Technology (I2CT)
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10.1109/i2ct42659.2018.9058091
◽
2018
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Author(s):
K Ramya
◽
P. Shanthi
Keyword(s):
Power Amplifier
◽
Class Ab
◽
Gan Hemt
Download Full-text
A Dual-Band High Efficiency Class-F GaN HEMT Power Amplifier for Wireless Communication
IETE Journal of Research
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10.1080/03772063.2019.1619486
◽
2019
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pp. 1-8
Author(s):
Sh. Rezaei Borjlu
◽
M. S. Khadem
Keyword(s):
Wireless Communication
◽
Power Amplifier
◽
High Efficiency
◽
Dual Band
◽
Gan Hemt
◽
Class F
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C-Ku band 120% relative bandwidth high efficiency high power amplifier using GaN HEMT
2009 Asia Pacific Microwave Conference
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10.1109/apmc.2009.5384324
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2009
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Cited By ~ 2
Author(s):
Eigo Kuwata
◽
Koji Yamanaka
◽
Tasuku Kirikoshi
◽
Akira Inoue
◽
Yoshihito Hirano
Keyword(s):
Power Amplifier
◽
High Power
◽
High Efficiency
◽
Gan Hemt
◽
High Power Amplifier
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Relative Bandwidth
◽
Ku Band
Download Full-text
Nonlinear Electrothermal GaN HEMT Model Applied to High-Efficiency Power Amplifier Design
IEEE Transactions on Microwave Theory and Techniques
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10.1109/tmtt.2012.2229712
◽
2013
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Vol 61
(1)
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pp. 444-454
◽
Cited By ~ 57
Author(s):
Justin B. King
◽
Thomas J. Brazil
Keyword(s):
Power Amplifier
◽
High Efficiency
◽
Gan Hemt
◽
Amplifier Design
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GaN HEMT based class-F power amplifier with broad bandwidth and high efficiency
2016 International Conference on Integrated Circuits and Microsystems (ICICM)
◽
10.1109/icam.2016.7813578
◽
2016
◽
Cited By ~ 4
Author(s):
Mustazar Iqbal
◽
Anna Piacibello
Keyword(s):
Power Amplifier
◽
High Efficiency
◽
Broad Bandwidth
◽
Gan Hemt
◽
Class F
Download Full-text
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