Design of Class-AB Power Amplifier using GaN HEMT Technology

2018 4th International Conference for Convergence in Technology (I2CT) ◽

10.1109/i2ct42659.2018.9058091 ◽

2018 ◽

Author(s):

K Ramya ◽

P. Shanthi

Keyword(s):

Power Amplifier ◽

Class Ab ◽

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A 5W class-AB power amplifier based on a GaN HEMT for LTE communication band

2016 16th Mediterranean Microwave Symposium (MMS) ◽

10.1109/mms.2016.7803827 ◽

2016 ◽

Author(s):

Mustazar Iqbal ◽

Anna Piacibello

Keyword(s):

Power Amplifier ◽

Class Ab ◽

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High performance GaN HEMT class-AB RF power amplifier for L-band applications

Proceedings of 2013 10th International Bhurban Conference on Applied Sciences & Technology (IBCAST) ◽

10.1109/ibcast.2013.6512186 ◽

2013 ◽

Author(s):

K. Hayat ◽

A. Kashif ◽

S. Azam ◽

T. Mehmood ◽

M. Imran

Keyword(s):

Power Amplifier ◽

High Performance ◽

Rf Power ◽

Class Ab ◽

Rf Power Amplifier ◽

Gan Hemt ◽

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Power amplifier design using GaN HEMT in class-AB mode for LTE communication band

2015 International Wireless Communications and Mobile Computing Conference (IWCMC) ◽

10.1109/iwcmc.2015.7289166 ◽

2015 ◽

Author(s):

Nabil Khalid ◽

Tahir Abbas ◽

Mojeeb Bin Ihsan

Keyword(s):

Power Amplifier ◽

Class Ab ◽

Gan Hemt ◽

Amplifier Design

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A broadband high efficiency class AB GaN HEMT balanced power amplifier

2017 8th International Conference on Information Technology (ICIT) ◽

10.1109/icitech.2017.8079979 ◽

2017 ◽

Author(s):

Waqar Ahmad Malik ◽

Abdel Fatah Ahmed Sheta ◽

Ibrahim Elshafiey

Keyword(s):

Power Amplifier ◽

High Efficiency ◽

Class Ab ◽

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A Predistortion Diode Linearizer Technique with Automatic Average Power Bias Control for a Class-F GaN HEMT Power Amplifier

IEICE Transactions on Electronics ◽

10.1587/transele.e94.c.1193 ◽

2011 ◽

Vol E94-C (7) ◽

pp. 1193-1198 ◽

Author(s):

Akihiro ANDO ◽

Yoichiro TAKAYAMA ◽

Tsuyoshi YOSHIDA ◽

Ryo ISHIKAWA ◽

Kazuhiko HONJO

Keyword(s):

Power Amplifier ◽

Average Power ◽

Gan Hemt ◽

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A High Efficiency 4–18 GHz GaN MMIC Power Amplifier based on 90nm T-gate GaN HEMT Technology

2020 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS) ◽

10.1109/bcicts48439.2020.9392935 ◽

2020 ◽

Author(s):

Shuoqi Chen ◽

Vipan Kumar ◽

Yu Cao

Keyword(s):

Power Amplifier ◽

High Efficiency ◽

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A High-Efficiency Class F MMIC Power Amplifier at 4.0 GHz Using AlGaN/GaN HEMT Technology

2012 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS) ◽

10.1109/csics.2012.6340065 ◽

2012 ◽

Author(s):

Valiallah Zomorrodian ◽

Umesh K. Mishra ◽

Robert A. York

Keyword(s):

Power Amplifier ◽

High Efficiency ◽

Gan Hemt ◽

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Class-AB Power Amplifier Design Guidelines

SBMO International Microwave Conference/Brazil, ◽

10.1109/sbmo.1993.589535 ◽

2005 ◽

Author(s):

F. Giannini ◽

G. Leuzzi ◽

E. Limiti ◽

L. Scucchia

Keyword(s):

Power Amplifier ◽

Design Guidelines ◽

Class Ab ◽

Amplifier Design

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Wideband class AB RF power amplifier using CMOS compatible SOI-MESFET device on 150nm technology

2012 IEEE Topical Conference on Power Amplifiers for Wireless and Radio Applications ◽

10.1109/pawr.2012.6174946 ◽

2012 ◽

Author(s):

M. Reza Ghajar ◽

Seth J. Wilk ◽

William Lepkowski ◽

Bertan Bakkaloglu ◽

Trevor J. Thornton

Keyword(s):

Power Amplifier ◽

Rf Power ◽

Class Ab ◽

Rf Power Amplifier ◽

Cmos Compatible

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Single and dual input packaged 5.5–6.5GHz, 20W, Quasi-MMIC GaN-HEMT Doherty Power Amplifier

2017 IEEE MTT-S International Microwave Symposium (IMS) ◽

10.1109/mwsym.2017.8058804 ◽

2017 ◽

Author(s):

Mohammed Ayad ◽

Estelle Byk ◽

Guillaume Neveux ◽

Marc Camiade ◽

Denis Barataud

Keyword(s):

Power Amplifier ◽

Gan Hemt ◽

Doherty Power Amplifier

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