Realization of Mach-Zehnder Modulator with Ultrahigh Extinction Ratio at Maximum Transmission Bias Point

Author(s):  
Aasif Bashir Dar ◽  
Faroze Ahmad
2020 ◽  
Vol 0 (0) ◽  
Author(s):  
Jesuwanth Sugesh Ramesh Gabriel ◽  
Sivasubramanian Arunagiri

AbstractIn this paper, we report the performance of a carrier depletion Silicon PIN phase shifter with over layer of 130 nm. It is observed that an optimum intrinsic gap of 250 nm for a device length of 5 mm at 2 V, resulted in Extinction Ratio (ER) of 23.41 dB and Bit Error Rate (BER) of 1.00 × 10−7 is obtained for 50 Gbps. The phase shifter is also designed for length 2 mm with an intrinsic gap of 100 nm at an operating voltage <4 V. The study also reveals that the proposed design for Mach-Zehnder modulator operating at a data rate of 100 Gbps for the concentration of P = 7 × 1017 cm−3 and N = 5 × 1017 cm−3 gives better BER and phase performance. The proposed design was also analysed in an intra-data centre communication setup of fibre length 15 km.


2010 ◽  
Vol 22 (12) ◽  
pp. 941-943 ◽  
Author(s):  
Yoshihiro Ogiso ◽  
Yuta Tsuchiya ◽  
Satoshi Shinada ◽  
Shinya Nakajima ◽  
Tetsuya Kawanishi ◽  
...  

2007 ◽  
Vol 55 (9) ◽  
pp. 1964-1972 ◽  
Author(s):  
Hitoshi Kiuchi ◽  
Tetsuya Kawanishi ◽  
Masumi Yamada ◽  
Takahide Sakamoto ◽  
Masahiro Tsuchiya ◽  
...  

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