4H-SiC-Dopant Segregated Schottky Barrier Cylindrical Gate All Around MOSFET for high speed and high power microwave applications
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2000 ◽
Vol 28
(5)
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pp. 1620-1623
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2009 ◽
Vol 115
(6)
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pp. 964-966
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2011 ◽
Vol 23
(11)
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pp. 3127-3130
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2011 ◽
Vol 23
(6)
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pp. 1579-1582
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2020 ◽
Vol 68
(11)
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pp. 7580-7583
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