Effect of F on B penetration through gate oxide for BF/sub 2/ implants used to obtain ultra-shallow junctions by RTA
2004 ◽
Vol 22
(1)
◽
pp. 306
◽
2013 ◽
Vol 2
(5)
◽
pp. P195-P204
◽
1991 ◽
Vol 20
(3)
◽
pp. 261-265
◽
1997 ◽
Vol 121
(1-4)
◽
pp. 216-220
◽
2011 ◽
pp. 86-131