Proceedings of 11th International Conference on Ion Implantation Technology
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Molecular Ion Implantation Technique For Obtaining The Same Depth Profile For The Component Atoms

Proceedings of 11th International Conference on Ion Implantation Technology ◽

10.1109/iit.1996.586568 ◽

2005 ◽

Author(s):

J. Ishikawa ◽

H. Tsuji ◽

M. Mimura ◽

Y. Gotoh

Keyword(s):

Ion Implantation ◽

Depth Profile ◽

Implantation Technique ◽

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Application of a pulsed, RF-driven, multicusp source for low energy plasma immersion ion implantation

Proceedings of 11th International Conference on Ion Implantation Technology ◽

10.1109/iit.1996.586559 ◽

2002 ◽

Author(s):

A.B. Wengrow ◽

K.N. Leung ◽

L.T. Perkins ◽

D.S. Pickard ◽

M.L. Rickard ◽

...

Keyword(s):

Ion Implantation ◽

Plasma Immersion Ion Implantation ◽

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TEM investigation of C-Si defects in carbon implanted silicon

Proceedings of 11th International Conference on Ion Implantation Technology ◽

10.1109/iit.1996.586497 ◽

2002 ◽

Author(s):

P. Werner ◽

R. Koegler ◽

W. Skorupa ◽

D. Eichler

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An electronic stopping power model for Monte Carlo and molecular dynamics simulation of ion implantation into silicon

Proceedings of 11th International Conference on Ion Implantation Technology ◽

10.1109/iit.1996.586437 ◽

2002 ◽

Author(s):

D. Cai ◽

N. Gronbech-Jensen ◽

C.M. Snell ◽

K.M. Beardmore ◽

Al.F. Tasch ◽

...

Keyword(s):

Molecular Dynamics ◽

Monte Carlo ◽

Molecular Dynamics Simulation ◽

Ion Implantation ◽

Dynamics Simulation ◽

Stopping Power ◽

Power Model ◽

Electronic Stopping Power

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High frequency ion sources for ion implanters-theoretical and practical comparison

Proceedings of 11th International Conference on Ion Implantation Technology ◽

10.1109/iit.1996.586265 ◽

2002 ◽

Author(s):

H. Ito ◽

N. Sakudo

Keyword(s):

High Frequency ◽

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H/sup +/ implantation in Si for the void cut SOI manufacturing

Proceedings of 11th International Conference on Ion Implantation Technology ◽

10.1109/iit.1996.586115 ◽

2002 ◽

Author(s):

T. Hara ◽

Y. Kakizaki ◽

S. Oshima ◽

T. Kihana ◽

T. Kitamura ◽

...

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Characterizing crystal lattice damage in high energy implants using interference contrast microscopy

Proceedings of 11th International Conference on Ion Implantation Technology ◽

10.1109/iit.1996.586432 ◽

2002 ◽

Author(s):

P. Flesher ◽

P. Borden ◽

Tongxin Lu ◽

S.K. Hahn

Keyword(s):

Crystal Lattice ◽

High Energy ◽

Contrast Microscopy ◽

Interference Contrast Microscopy ◽

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Multicharged boron ions from pure elements evaporated in a 2.45-GHz ECR source

Proceedings of 11th International Conference on Ion Implantation Technology ◽

10.1109/iit.1996.586278 ◽

2002 ◽

Author(s):

Y. Kato ◽

A. Fukukawa ◽

S. Ishii

Keyword(s):

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Effect of F on B penetration through gate oxide for BF/sub 2/ implants used to obtain ultra-shallow junctions by RTA

Proceedings of 11th International Conference on Ion Implantation Technology ◽

10.1109/iit.1996.586106 ◽

2002 ◽

Author(s):

A. Sultan ◽

M. Craig ◽

S. Banejee ◽

S. List ◽

T. Grider ◽

...

Keyword(s):

Shallow Junctions ◽

Ultra Shallow Junctions

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Molecular dynamics simulation of low energy boron and arsenic implant into silicon

Proceedings of 11th International Conference on Ion Implantation Technology ◽

10.1109/iit.1996.586434 ◽

2002 ◽

Author(s):

K.M. Beardmore ◽

D. Cai ◽

N. Gronbech-Jensen

Keyword(s):

Molecular Dynamics ◽

Molecular Dynamics Simulation ◽

Dynamics Simulation

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