Proceedings of 11th International Conference on Ion Implantation Technology
Latest Publications

TOTAL DOCUMENTS

216

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Published By IEEE

078033289x

Latest Documents Most Cited Documents Contributed Authors Related Sources Related Keywords

Molecular Ion Implantation Technique For Obtaining The Same Depth Profile For The Component Atoms

Proceedings of 11th International Conference on Ion Implantation Technology ◽

10.1109/iit.1996.586568 ◽

2005 ◽

Cited By ~ 1

Author(s):

J. Ishikawa ◽

H. Tsuji ◽

M. Mimura ◽

Y. Gotoh

Keyword(s):

Ion Implantation ◽

Depth Profile ◽

Implantation Technique ◽

Molecular Ion

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Exploration and prevention of photo resist burning in a high current ion implanter

Proceedings of 11th International Conference on Ion Implantation Technology ◽

10.1109/iit.1996.586181 ◽

2002 ◽

Cited By ~ 1

Author(s):

T. Romig ◽

M. Bishop ◽

V. Rio

Keyword(s):

High Current

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Effect of additional low temperature RTA on ultra-shallow p/sup +/-n junction formation

Proceedings of 11th International Conference on Ion Implantation Technology ◽

10.1109/iit.1996.586482 ◽

2002 ◽

Cited By ~ 1

Author(s):

Kil-Ho Lee ◽

Jae-Geun Oh ◽

Byung-Jin Cho ◽

Jong-Choul Kim

Keyword(s):

Low Temperature ◽

Junction Formation

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A novel ion source for high current ion implantation

Proceedings of 11th International Conference on Ion Implantation Technology ◽

10.1109/iit.1996.586261 ◽

2002 ◽

Cited By ~ 5

Author(s):

A. Renau ◽

D. Smatlak

Keyword(s):

Ion Implantation ◽

Ion Source ◽

High Current

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H/sup +/ implantation in Si for the void cut SOI manufacturing

Proceedings of 11th International Conference on Ion Implantation Technology ◽

10.1109/iit.1996.586115 ◽

2002 ◽

Cited By ~ 1

Author(s):

T. Hara ◽

Y. Kakizaki ◽

S. Oshima ◽

T. Kihana ◽

T. Kitamura ◽

...

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Characterizing crystal lattice damage in high energy implants using interference contrast microscopy

Proceedings of 11th International Conference on Ion Implantation Technology ◽

10.1109/iit.1996.586432 ◽

2002 ◽

Author(s):

P. Flesher ◽

P. Borden ◽

Tongxin Lu ◽

S.K. Hahn

Keyword(s):

Crystal Lattice ◽

High Energy ◽

Contrast Microscopy ◽

Interference Contrast Microscopy ◽

Lattice Damage

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Multicharged boron ions from pure elements evaporated in a 2.45-GHz ECR source

Proceedings of 11th International Conference on Ion Implantation Technology ◽

10.1109/iit.1996.586278 ◽

2002 ◽

Cited By ~ 1

Author(s):

Y. Kato ◽

A. Fukukawa ◽

S. Ishii

Keyword(s):

Boron Ions ◽

Ecr Source

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Effect of F on B penetration through gate oxide for BF/sub 2/ implants used to obtain ultra-shallow junctions by RTA

Proceedings of 11th International Conference on Ion Implantation Technology ◽

10.1109/iit.1996.586106 ◽

2002 ◽

Author(s):

A. Sultan ◽

M. Craig ◽

S. Banejee ◽

S. List ◽

T. Grider ◽

...

Keyword(s):

Gate Oxide ◽

Shallow Junctions ◽

Ultra Shallow Junctions

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Molecular dynamics simulation of low energy boron and arsenic implant into silicon

Proceedings of 11th International Conference on Ion Implantation Technology ◽

10.1109/iit.1996.586434 ◽

2002 ◽

Cited By ~ 1

Author(s):

K.M. Beardmore ◽

D. Cai ◽

N. Gronbech-Jensen

Keyword(s):

Molecular Dynamics ◽

Molecular Dynamics Simulation ◽

Low Energy ◽

Dynamics Simulation

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Application of a pulsed, RF-driven, multicusp source for low energy plasma immersion ion implantation

Proceedings of 11th International Conference on Ion Implantation Technology ◽

10.1109/iit.1996.586559 ◽

2002 ◽

Author(s):

A.B. Wengrow ◽

K.N. Leung ◽

L.T. Perkins ◽

D.S. Pickard ◽

M.L. Rickard ◽

...

Keyword(s):

Ion Implantation ◽

Low Energy ◽

Plasma Immersion Ion Implantation ◽

Pulsed Rf

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Proceedings of 11th International Conference on Ion Implantation TechnologyLatest Publications

TOTAL DOCUMENTS

H-INDEX

Published By IEEE

Molecular Ion Implantation Technique For Obtaining The Same Depth Profile For The Component Atoms

Exploration and prevention of photo resist burning in a high current ion implanter

Effect of additional low temperature RTA on ultra-shallow p/sup +/-n junction formation

A novel ion source for high current ion implantation

H/sup +/ implantation in Si for the void cut SOI manufacturing

Characterizing crystal lattice damage in high energy implants using interference contrast microscopy

Multicharged boron ions from pure elements evaporated in a 2.45-GHz ECR source

Effect of F on B penetration through gate oxide for BF/sub 2/ implants used to obtain ultra-shallow junctions by RTA

Molecular dynamics simulation of low energy boron and arsenic implant into silicon

Application of a pulsed, RF-driven, multicusp source for low energy plasma immersion ion implantation

Proceedings of 11th International Conference on Ion Implantation Technology
Latest Publications