Schottky barrier height reduction of NiGe/Ge junction by P ion implantation for metal source/drain Ge CMOS devices
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2004 ◽
Vol 43
(4B)
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pp. 1713-1716
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2012 ◽
Vol 33
(12)
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pp. 1687-1689
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1996 ◽
Vol 35
(Part 1, No. 2B)
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pp. 1428-1430
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2009 ◽
Vol 30
(11)
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pp. 1140-1142
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2016 ◽
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