Schottky barrier height reduction of NiGe/Ge junction by P ion implantation for metal source/drain Ge CMOS devices

Author(s):  
Hiroshi Oka ◽  
Yuya Minoura ◽  
Takuji Hosoi ◽  
Takayoshi Shimura ◽  
Heiji Watanabe
2012 ◽  
Vol 33 (12) ◽  
pp. 1687-1689 ◽  
Author(s):  
Zhiqiang Li ◽  
Xia An ◽  
Min Li ◽  
Quanxin Yun ◽  
Meng Lin ◽  
...  

1996 ◽  
Vol 35 (Part 1, No. 2B) ◽  
pp. 1428-1430 ◽  
Author(s):  
Masaaki Onomura ◽  
Shinji Saito ◽  
John Rennie ◽  
Yukie Nishikawa ◽  
Peter J. Parbrook ◽  
...  

2009 ◽  
Vol 30 (11) ◽  
pp. 1140-1142 ◽  
Author(s):  
Wei-Yip Loh ◽  
H. Etienne ◽  
B. Coss ◽  
I. Ok ◽  
D. Turnbaugh ◽  
...  

1995 ◽  
Author(s):  
M. Onomura ◽  
S. Saito ◽  
J. Rennie ◽  
Y. Nishikawa ◽  
P. J. Parbrook ◽  
...  

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