Improvement in Strain Sensor Stability by Adapting the Metal Contact Layer

Research on stretchable strain sensors is actively conducted due to increasing interest in wearable devices. However, typical studies have focused on improving the elasticity of the electrode. Therefore, methods of directly connecting wire or attaching conductive tape to materials to detect deformation have been used to evaluate the performance of strain sensors. Polyaniline (PANI), a p-type semiconductive polymer, has been widely used for stretchable electrodes. However, conventional procedures have limitations in determining an appropriate metal for ohmic contact with PANI. Materials that are generally used for connection with PANI form an undesirable metal-semiconductor junction and have significant contact resistance. Hence, they degrade sensor performance. This study secured ohmic contact by adapting Au thin film as the metal contact layer (the MCL), with lower contact resistance and a larger work function than PANI. Additionally, we presented a buffer layer using hard polydimethylsiloxane (PDMS) and structured it into a dumbbell shape to protect the metal from deformation. As a result, we enhanced steadiness and repeatability up to 50% strain by comparing the gauge factors and the relative resistance changes. Consequently, adapting structural methods (the MCL and the dumbbell shape) to a device can result in strain sensors with promising stability, as well as high stretchability.

Top-gate field-effect transistor based on monolayer WS2 with an ion-gel gate dielectric

A top-gate field-effect transistor (FET), based on monolayer (ML) tungsten disulfide (WS2), and with an ion-gel dielectric was developed. The high electrical contact resistance of the Schottky contacts at the n-type transition metal dichalcogenides/metal electrode interfaces often adversely affects the device performance. We report the contact resistance and Schottky barrier height of an FET with Au electrodes. The FET is based on ML WS2 that was synthesised using chemical vapour deposition and was assessed using the transfer-length method and low-temperature measurements. Raman and photoluminescence spectra were recorded to determine the optical properties of the WS2 layers. The ML WS2 FET with an ion-gel top gate dielectric exhibits n-type behaviour, with a mobility, on/off ratio of 1.97 cm2/V·s, 1.51×105, respectively.

Методики исследования электрического контактного сопротивления в структуре металлическая пленка--полупроводник

The electrical contact resistance significantly affects the efficiency of thermoelements. In the case of high doped thermoelectric materials, the tunneling mechanism of conductivity prevails at metal-semiconductor interface, which makes it possible to obtain a contact resistance of less than 10-8 Ohm•m2. Low resistance values significantly complicate its experimental determination. Work present three techniques and a measuring stand for the investigation of contact resistance. The techniques are based on the measurement of the total electrical resistance, which consists of transient contact resistance and the resistance of the thermoelectric material with its subsequent exclusion. The developed techniques differ in the arrangement of the investigated contacts on the samples, in the methods of measurement and processing of the obtained results, and make it possible to determine the specific contact resistance of the order of 10-10 Ohm•m2.

Contact resistance based tactile sensor using covalently cross-linked graphene aerogels

A movable electrical contact between two materials is one of the most fundamental, simple, and common components in electronics that is used for binary control of a conducting path in...

Iodide Substitution Induced Phase Transition of Chemical Vapor Deposited MoS2

Molybdenum disulfide (MoS2) based electronic devices, particularly field effect transistors, have outstanding performance. However, a large contact resistance between electrode metals and MoS2 limits the full potential of these devices....

ANALISIS KINERJA PMS REL 2 BAY TRAFO 6 MENGGUNAKAN THERMOVISION METHODE DI GARDU INDUK SUNYARAGI

In an effort to provide reliable and efficient electrical energy, substations have an important role in regulating the demand for electric power loads and as a center for securing electrical power system components in a certain area. Frequent disturbances become a benchmark for an electric power system whether or not it is good or not in an effort to provide reliable and efficient energy. One of the maintenance measures is temperature measurement using thermal imagers, which is commonly referred to as thermovision measurement.Thermal imager is a tool that can be used for predictive maintenance activities to monitor the condition and performance of an equipment so that the possibility of equipment failure can be minimized. In October 2020, after thermovisiting transformer bay 6 at the Sunyaragi substation, it was discovered that there was a hotspot on the T-phase separation blade, causing heating of the blade, the above conditions can result in a decrease in PMS performance, with the worst condition if left alone can result in damage to the PMS blade and can also melt when the peak load is on the transformer 6. Under these conditions, maintenance is carried out by maintaining contact resistance, insulation resistance, and grounding resistance. The results of the analysis of contact resistance after maintenance show that the equipment is in good condition and still suitable for use, with a value of 7μΩ for the R phase, 6.5μΩ for the S phase, and 6.7μΩ for the T phase.

A Rigorous Analysis of Self-Heating Effects in Nanoscale Dielectric Pocket Double-Gate-All-Around (DP-DGAA) MOSFETs

Dielectric Pocket Double-Gate-All-Around (DP-DGAA) MOSFETs are one of the preferred choices for ULSI applications because of significantly low off-current, reduced power dissipation, and high immunity to short channel effect. However, DP-DGAA MOSFETs suffer from self-heating owing to the unavailability of proper heat take-out paths. In this paper, the electrothermal (ET) simulations have been performed with hydrodynamic and thermodynamic transport models to analyze the self-heating effects (SHEs) in DP-DGAA MOSFETs. The electrothermal characteristics against various device parameters such as spacer length, device thickness, thermal contact resistance, and drain voltage have been investigated. The effect of SHE on the drive current has also been evaluated. Further, the impact of thermal contact resistance and ambient temperature variations of the device on SHE and thermal noise have been analyzed using Sentaurus TCAD simulator.