2016 IEEE Silicon Nanoelectronics Workshop (SNW)
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9781509007264
Latest Documents Most Cited Documents Contributed Authors Related Sources Related Keywords

A possible threshold voltage definition of lateral tunnel FET

2016 ◽  
Author(s):  
Yoshiaki Mori ◽  
Shingo Sato ◽  
Yasuhisa Omura ◽  
Abhijit Mallik
Keyword(s):  
Threshold Voltage ◽  
Tunnel Fet ◽  
Lateral Tunnel ◽  
Definition Of

Computing with coupled dynamical systems

2016 ◽  
Author(s):  
Suman Datta ◽  
N. Shukla ◽  
A. Parihar ◽  
A. Raychowdhury
Keyword(s):  
Dynamical Systems

Capacitance matching effects in negative capacitnace field effect transistor

2016 ◽  
Author(s):  
Jaesung Jo ◽  
Asif Islam Khan ◽  
Karam Cho ◽  
Sangheon Oh ◽  
Sayeef Salahuddin ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistor ◽  
Effect Transistor

Investigation of doping in InAs/GaSb hetero-junctions for tunnel-FETs

2016 ◽  
Author(s):  
Davide Cutaia ◽  
Heinz Schmid ◽  
Mattias Borg ◽  
Kirsten Moselund ◽  
Nicolas Bologna ◽  
...  
Keyword(s):  
Tunnel Fets

High quality Ge-OI, III–V-OI on 200 mm Si substrate

2016 ◽  
Author(s):  
Kwang Hong Lee ◽  
Yiding Lin ◽  
Shuyu Bao ◽  
Li Zhang ◽  
Kenneth Lee ◽  
...  
Keyword(s):  
Si Substrate ◽  
High Quality

Two competing limiters in MOSFETs scaling: Neutral defects and S/D plasmons

2016 ◽  
Author(s):  
Shang-Hsun Hsieh ◽  
Jo-Chun Hung ◽  
Heng-Jui Weng ◽  
Ming-Fu Tsai ◽  
Chih-Chi Chiang ◽  
...  

Reliable doping technique for WSe2 by W:Ta co-sputtering process

2016 ◽  
Author(s):  
Po-Yen Chien ◽  
Ming Zhang ◽  
Shao-Chia Huang ◽  
Min-Hung Lee ◽  
Hung-Ru Hsu ◽  
...  
Keyword(s):  
Doping Technique
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