Pulse Amplification and Spatio-Spectral Hole-Burning in Inhomogeneously Broadened Quantum-Dot Semiconductor Optical Amplifiers

2009 ◽  
Vol 45 (1) ◽  
pp. 21-33 ◽  
Author(s):  
Dietmar W. Reschner ◽  
Edeltraud Gehrig ◽  
Ortwin Hess
Keyword(s):  
Quantum Dot ◽  
Optical Amplifiers ◽  
Semiconductor Optical Amplifiers ◽  
Hole Burning ◽  
Spectral Hole Burning ◽  
Pulse Amplification ◽  
Spectral Hole

COMPARISON BETWEEN ULTRAFAST GAIN AND PHASE DYNAMICS IN SEMICONDUCTOR OPTICAL AMPLIFIERS

2010 ◽  
Vol 19 (02) ◽  
pp. 319-325
Author(s):  
LI WANG ◽  
ZHI WANG ◽  
WEI-PING HUANG
Keyword(s):  
Optical Amplifiers ◽  
Broad Band ◽  
Semiconductor Optical Amplifiers ◽  
Hole Burning ◽  
Spectral Hole Burning ◽  
Ultrafast Dynamics ◽  
Carrier Heating ◽  
Phase Dynamics ◽  
Spectral Hole ◽  
Bulk Semiconductor

The ultrafast dynamics of gain and phase in bulk semiconductor optical amplifiers are numerically investigated over a broad band of about 200 nm based on the semiclassical method of density matrix equations. The gain dynamics and phase dynamics are compared in four different bands for 200 fs Gaussian pump pulse. It is predicted that the recovery time of phase may be longer or shorter than that of gain depending on probe wavelengths. Furthermore, phase recovery overshoot may appear at wavelengths shorter than the pump wavelength. These interesting features result from the competition between spectral-hole burning and carrier heating over the whole band.

Spectral Hole-Burning and Carrier-Heating Dynamics in Quantum-Dot Amplifiers: Comparison with Bulk Amplifiers

2001 ◽  
Vol 224 (2) ◽  
pp. 419-423 ◽  
Author(s):  
P. Borri ◽  
W. Langbein ◽  
J.M. Hvam ◽  
F. Heinrichsdorff ◽  
M.-H. Mao ◽  
...  
Keyword(s):  
Quantum Dot ◽  
Hole Burning ◽  
Spectral Hole Burning ◽  
Carrier Heating ◽  
Spectral Hole

Lateral-cavity spectral hole burning in quantum-dot lasers

2002 ◽  
Vol 81 (9) ◽  
pp. 1546-1548 ◽  
Author(s):  
D. Ouyang ◽  
R. Heitz ◽  
N. N. Ledentsov ◽  
S. Bognár ◽  
R. L. Sellin ◽  
...  
Keyword(s):  
Quantum Dot ◽  
Hole Burning ◽  
Spectral Hole Burning ◽  
Quantum Dot Lasers ◽  
Spectral Hole ◽  
Lateral Cavity

Tunable grating-coupled laser oscillation and spectral hole burning in an InAs quantum-dot laser diode

2000 ◽  
Vol 36 (4) ◽  
pp. 479-485 ◽  
Author(s):  
P. Eliseev ◽  
H. Li ◽  
A. Stintz ◽  
G.T. Liu ◽  
T.C. Newell ◽  
...  
Keyword(s):  
Quantum Dot ◽  
Laser Diode ◽  
Hole Burning ◽  
Spectral Hole Burning ◽  
Laser Oscillation ◽  
Spectral Hole ◽  
Quantum Dot Laser ◽  
Inas Quantum Dot

scholarly journals Spectral hole-burning and carrier-heating dynamics in InGaAs quantum-dot amplifiers

2000 ◽  
Vol 6 (3) ◽  
pp. 544-551 ◽  
Author(s):  
P. Borri ◽  
W. Langbein ◽  
J.M. Hvam ◽  
F. Heinrichsdorff ◽  
M.-H. Mao ◽  
...  
Keyword(s):  
Quantum Dot ◽  
Hole Burning ◽  
Spectral Hole Burning ◽  
Carrier Heating ◽  
Spectral Hole

Impact of the mesa etching profiles on the spectral hole burning effects in quantum dot lasers

2004 ◽  
Vol 19 (5) ◽  
pp. L43-L47 ◽  
Author(s):  
D Ouyang ◽  
N N Ledentsov ◽  
S Bognár ◽  
F Hopfer ◽  
R L Sellin ◽  
...  
Keyword(s):  
Quantum Dot ◽  
Hole Burning ◽  
Spectral Hole Burning ◽  
Quantum Dot Lasers ◽  
Spectral Hole

GAIN DYNAMICS AND ASSOCIATED NONLINEARITIES IN SEMICONDUCTOR OPTICAL AMPLIFIERS

1996 ◽  
Vol 07 (01) ◽  
pp. 179-222 ◽  
Author(s):  
J. M. WIESENFELD
Keyword(s):  
Carrier Transport ◽  
Wavelength Conversion ◽  
Optical Amplifiers ◽  
Semiconductor Optical Amplifiers ◽  
Optical Amplifier ◽  
Hole Burning ◽  
Spectral Hole Burning ◽  
Carrier Distribution ◽  
Dynamical Processes ◽  
Carrier Heating

A rich variety of dynamical processes underlie the operation of active semiconductor light-emitting devices, such as semiconductor optical amplifiers. These processes include interband and intraband carrier dynamics. Interband processes comprise spontaneous recombination, both radiative and Auger, stimulated radiative recombination, and carrier transport. Intraband processes comprise carrier heating and cooling and spectral hole-burning, among others. The dynamical processes affect both the gain and refractive index of the semiconductor optical amplifier. In this article, these dynamic processes and their physical origins are reviewed. Under conditions of large, time-varying changes in carrier density or intraband carrier distribution, nonlinear gain and refraction becomes significant. For applications requiring linear amplification, such nonlinearities are deleterious. However, for many applications such nonlinearities can be the basis for useful device functions. In particular, the nonlinearities of cross-gain modulation, cross-phase modulation, and four-wave mixing in semiconductor optical amplifiers have been applied for the functions of wavelength conversion, optical time-demultiplexing, clock recovery, and trans-multiplexing. Such nonlinear devices based on semiconductor optical amplifiers and their effects on propagating optical signals are also reviewed.

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