Multichannel random signal generation in optical fiber-based ring laser with quantum-dot semiconductor optical amplifier

Random signal generation in a ring resonator laser is achieved with quantum-dot semiconductor optical amplifiers. The lasing spectra were obtained over a wide range of wavelength, and the individual longitudinal modes acted as the channels for random number generation.

Alternative method of implementation of all-optical NOR and NAND gates using quantum-dot semiconductor optical amplifiers in non-interferometer structure

Present communication deals with the design and analysis of all-optical NOR and NAND gates using Quantum dot Semiconductor Optical Amplifiers (QDSOA). The design uses no interferometer structure but cross gain modulation is utilized for operation. The structures are simple and simulations at a rate of 1 Tb/s are processed. For unsaturated gain 30 dB, the logic gates show high values of ER (29.82 dB, 16.93 dB), CR (29.6 dB, 21.33 dB), and Q (25.4 dB, 13.2 dB). This ensures practical feasibility and high quality of the proposed gates.

Low-Threshold, High-Power On-Chip Tunable III-V/Si Lasers with Integrated Semiconductor Optical Amplifiers

Heterogeneously integrated III-V/Si lasers and semiconductor optical amplifiers (SOAs) are key devices for integrated photonics applications requiring miniaturized on-chip light sources, such as in optical communications, sensing, or spectroscopy. In this work, we present a widely tunable laser co-integrated with a semiconductor optical amplifier in a heterogeneous platform that combines AlGaInAs multiple quantum wells (MQWs) and InP-based materials with silicon-on-insulator (SOI) wafers containing photonic integrated circuits. The co-integrated device is compact, has a total device footprint of 0.5 mm2, a lasing current threshold of 10 mA, a selectable wavelength tuning range of 50 nm centered at λ = 1549 nm, a fiber-coupled output power of 10 mW, and a laser linewidth of ν = 259 KHz. The SOA provides an on-chip gain of 18 dB/mm. The total power consumption of the co-integrated devices remains below 0.5 W even for the most power demanding lasing wavelengths. Apart from the above-mentioned applications, the co-integration of compact widely tunable III-V/Si lasers with on-chip SOAs provides a step forward towards the development of highly efficient, portable, and low power systems for wavelength division multiplexed passive optical networks (WDM-PONs).

A Comparison of Top Distributed Bragg Reflector for 1300 nm Vertical Cavity Semiconductor Optical Amplifiers Based on III–V Compound

In this work, the design of GaAs/AlGaAs distributed Bragg reflector (DBR) has been implemented for 1300 nm vertical cavity semiconductor optical amplifiers (VCSOAs) for optical fiber communication applications. The top DBR period and Al concentration are varied, the peak reflectivity of the DBR is increasing from 50% to 97.5% for 13 periods with increasing Al concentration, whereas the reflectivity bandwidth is increased to almost 190 nm. The relation between wavelength and incidence angle variation on DBR reflectivity is increasing with the incident angle (0°, 20°, 30°, and 50°), the resonant wavelength and bandwidth of the measured reflectance spectra shifts to shorter wavelength and wider bandwidth, respectively. In addition, a comparison between the linear, the graded, and the parabolic DBRs has been achieved with transfer matrix method using MATLAB software to show the influence of layer in DBRs and its effect on lasing wavelength. It is shown that using grading DBR mirror is much more beneficial compared to abrupt DBR, whereas it has lower reflectivity of almost 10% due to VCSOAs device which needs less number of top layers until prevent reaching lasing threshold.

Dynamics and its Effects on Saturation Region in Semiconductor Optical Amplifiers

We focus on studying the dynamics of bulk semiconductor optical amplifiers and their effects on the saturation region for short pulse that differ, however there is the same unsaturated gain for both dynamics. Parameters like current injection, fast dynamics present by carrier heating (CH), and spectra hole burning (SHB) are studied for regions that occur a response to certain dynamics. The behavior of the saturation region is found to be responsible for phenomena such as recovery time and chirp for the pulse under study.

DATA ANALYSIS WHEN CREATING AN EXTENDED GIGABIT OPTICAL NETWORK

The article describes the application of data analysis, which allows, based on the processed experimental data, to obtain new knowledge about the behavior and capabilities of a gigabit passive optical network (GPON network). The description of the test bench of the GPON network is given. The paper studied the characteristics of semiconductor optical amplifiers used to increase the range of GPON networks, as well as their dependence on the input power and signal wavelength. For data processing, the MatLab mathematical calculation automation package and the OriginLab package for numerical data analysis and scientific graphics were used. It is shown that the use of an EDFA amplifier (an optical amplifier on an erbium-doped fiber) in the architecture of a gigabit passive optical network is the best choice and allows expanding the range of the GPON network from 20 kilometers to 60 kilometers.