A 22W Ku band power amplifier based on internal-matched 6mm GaN HEMTs single chip

The 2012 International Workshop on Microwave and Millimeter Wave Circuits and System Technology ◽

10.1109/mmwcst.2012.6238195 ◽

2012 ◽

Author(s):

W. J. Luo ◽

X. J. Chen ◽

L. Pang ◽

T. T. Yuan ◽

X. Y. Liu

Keyword(s):

Power Amplifier ◽

Single Chip ◽

Gan Hemts ◽

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Board-Level Ku-Band Power Amplifier: Design and Challenges

IETE Journal of Research ◽

10.1080/03772063.2020.1742804 ◽

2020 ◽

pp. 1-9

Author(s):

Hemant Kumar Singhal ◽

Karun Rawat

Keyword(s):

Power Amplifier ◽

Amplifier Design ◽

Board Level ◽

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A hybrid two stage 20-W GaN HEMT Ku-band power amplifier for very small aperture terminals

2018 22nd International Microwave and Radar Conference (MIKON) ◽

10.23919/mikon.2018.8404993 ◽

2018 ◽

Author(s):

Felix Rautschke ◽

Daniel Maassen ◽

Soenke Vehring ◽

Georg Boeck

Keyword(s):

Power Amplifier ◽

Two Stage ◽

Small Aperture ◽

Gan Hemt ◽

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Ku-band 15 W single-chip HJFET power amplifier

1996 IEEE MTT-S International Microwave Symposium Digest ◽

10.1109/mwsym.1996.511035 ◽

2002 ◽

Author(s):

K. Matsunaga ◽

Y. Okamoto ◽

I. Miura ◽

M. Kuzuhara

Keyword(s):

Power Amplifier ◽

Single Chip ◽

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A 1-Watt Ku-band power amplifier in SiGe with 37.5% PAE

2016 IEEE Radio Frequency Integrated Circuits Symposium (RFIC) ◽

10.1109/rfic.2016.7508317 ◽

2016 ◽

Author(s):

Ying Chen ◽

Mark P. van der Heijden ◽

Domine M. W. Leenaerts

Keyword(s):

Power Amplifier ◽

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1 -watt ku-band power amplifier MMICs using low-cost quad-flat plastic package

2004 IEEE MTT-S International Microwave Symposium Digest (IEEE Cat. No.04CH37535) ◽

10.1109/mwsym.2004.1336015 ◽

2004 ◽

Author(s):

A. Bessemoulin ◽

M. Parisot ◽

M. Camiade

Keyword(s):

Power Amplifier ◽

Low Cost ◽

Plastic Package ◽

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A GaN HEMTs Nonlinear Large-Signal Statistical Model and Its Application in S-Band Power Amplifier Design

IEEE Microwave and Wireless Components Letters ◽

10.1109/lmwc.2016.2517444 ◽

2016 ◽

Vol 26 (2) ◽

pp. 128-130 ◽

Author(s):

Zhikai Chen ◽

Yuehang Xu ◽

Bin Zhang ◽

Tangsheng Chen ◽

Tao Gao ◽

...

Keyword(s):

Statistical Model ◽

Power Amplifier ◽

Large Signal ◽

Gan Hemts ◽

Amplifier Design

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High-Gain AlGaN/GaN HEMT Single Chip E-Band Power Amplifier MMIC with 30 dBm Output Power

2015 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS) ◽

10.1109/csics.2015.7314510 ◽

2015 ◽

Author(s):

Erdin Ture ◽

Dirk Schwantuschke ◽

Axel Tessmann ◽

Sandrine Wagner ◽

Peter Bruckner ◽

...

Keyword(s):

Output Power ◽

Power Amplifier ◽

High Gain ◽

Single Chip ◽

Gan Hemt ◽

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Simulation Design of Ku Band Power Amplifier

10.1109/iscipt53667.2021.00074 ◽

2021 ◽

Author(s):

Ping Yang ◽

Quanming Zhao ◽

Peng Gao ◽

Yanmang Su

Keyword(s):

Power Amplifier ◽

Simulation Design ◽

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A Compact 500-mW Ku-band Power Amplifier MMIC in 3×3-mm2 Quad Flat (QFN) Packages

2006 European Microwave Integrated Circuits Conference ◽

10.1109/emicc.2006.282794 ◽

2006 ◽

Author(s):

A. Bessemoulin ◽

Y.H. Suh ◽

D. Richardson ◽

S.J. Mahon ◽

J.T. Harvey

Keyword(s):

Power Amplifier ◽

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Wide‐band high‐efficiency Ku‐band power amplifier

IET Circuits Devices & Systems ◽

10.1049/iet-cds.2014.0134 ◽

2014 ◽

Vol 8 (6) ◽

pp. 583-592 ◽

Author(s):

Alireza Yousefi ◽

Ali Medi

Keyword(s):

Power Amplifier ◽

High Efficiency ◽

Wide Band ◽

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