A broadband power amplifier module based on GaN HEMT operating Ku band is designed. TGF2023-02 Chip of GaN HEMT from TriQuint is modeled first. And then the module consists of two stages amplifiers. The first stage amplifier is single-stage amplifier and the second is two-way combiner amplifier. Wilkinson power divider, DC bias circuits and microstrip matching circuits are simulated and designed carefully. Simulation results showed that the amplifier module exhibits a power gain of 7 dB, power added efficiency of 13.9%, and an output power of 16 W under Vds=28 V, Vgs=-3.6 V, CW operating conditions at the frequency of 15 GHz.
Design of Two-Stage X-Band Power Amplifier Using GaN-HEMT