Subnanosecond high current switching with low-ohmic load by application of drift step-recovery diodes

2002 ◽  
Author(s):  
S. Vainshtein ◽  
J. Kostamovaara ◽  
K. Maatta ◽  
A. Kilpela
Keyword(s):  
High Current ◽  
Current Switching

Magnetically driven high current switching arcs in vacuum and low pressure gas

1999 ◽  
Vol 27 (4) ◽  
pp. 1021-1025 ◽  
Author(s):  
J. Teichmann ◽  
M. Romheld ◽  
W. Hartmann
Keyword(s):  
Low Pressure ◽  
High Current ◽  
Current Switching

scholarly journals PASSWORD BASED ELECTRIC LOAD SWITCHING GEAR FOR THE SAFETY OF LINEMAN

2019 ◽  
Vol 1 (1) ◽  
pp. 48-55
Author(s):  
Blessed Olalekan OYEBOLA
Keyword(s):  
High Voltage ◽  
Human Life ◽  
Electrical Power ◽  
Electrical Circuit ◽  
Power Installation ◽  
Electric Load ◽  
High Current ◽  
Switching System ◽  
Current Switching

Safety of human life is of a paramount importance. In high current switching system, switch gear protects electrical circuit. However there is need to provide confidence to working engineers during installation work on high voltage installations. To prevent accidental switching on of switch gear by unauthorized workforce, this paper proposed a more life secured switching password-enabled device that strengthen working confidence and inactivate unauthorized person from hazardous switching of electrical power installation without the notice of field working engineers.

13-kV, 20-A 4H-SiC PiN Diodes for Power System Applications

2014 ◽  
Vol 778-780 ◽  
pp. 855-858 ◽  
Author(s):  
Dai Okamoto ◽  
Yasunori Tanaka ◽  
Tomonori Mizushima ◽  
Mitsuru Yoshikawa ◽  
Hiroyuki Fujisawa ◽  
...  
Keyword(s):  
Power System ◽  
High Voltage ◽  
Light Emission ◽  
Voltage Drop ◽  
High Current ◽  
Forward Voltage ◽  
Pin Diodes ◽  
Current Switching ◽  
Forward Voltage Drop

We successfully fabricated 13-kV, 20-A, 8 mm × 8 mm, drift-free 4H-SiC PiN diodes. The fabricated diodes exhibited breakdown voltages that exceeded 13 kV, a forward voltage drop of 4.9–5.3 V, and an on-resistance (RonAactive) of 12 mW·cm2. The blocking yield at 10 kV on a 3-in wafer exceeded 90%. We investigated failed devices using Candela defect maps and light-emission images and found that a few devices failed because of large defects on the chip. We also demonstrated that the fabricated diodes can be used in conducting high-voltage and high-current switching tests.

Sign in / Sign up

Export Citation Format

Share Document