Low noise CMOS active pixel sensor for digital radiography

2008 ◽  
Author(s):  
David Sander ◽  
Pavel Stepanov ◽  
Irving N. Weinberg ◽  
Pamela Abshire
Keyword(s):  
Digital Radiography ◽  
Low Noise ◽  
Active Pixel Sensor ◽  
Active Pixel

A Low-Noise Dual-Stage a-Si:H Active Pixel Sensor

2012 ◽  
Vol 59 (6) ◽  
pp. 1679-1685 ◽  
Author(s):  
Edward H. Lee ◽  
George R. Kunnen ◽  
Alfonso Dominguez ◽  
David R. Allee
Keyword(s):  
Low Noise ◽  
Active Pixel Sensor ◽  
Active Pixel ◽  
Dual Stage

Very Large Area CMOS Active-Pixel Sensor for Digital Radiography

2009 ◽  
Vol 56 (11) ◽  
pp. 2623-2631 ◽  
Author(s):  
Michael Farrier ◽  
Thorsten Graeve Achterkirchen ◽  
Gene P. Weckler ◽  
Alex Mrozack
Keyword(s):  
Digital Radiography ◽  
Large Area ◽  
Active Pixel Sensor ◽  
Active Pixel

Design of a Low Noise Active Pixel Sensor using Complementary Metal-Oxide-Semiconductor Technology

2016 ◽  
Vol 4 (2) ◽  
pp. 130-136
Author(s):  
N.P. Maity ◽  
◽  
Reshmi Maity ◽  
Srimanta Baishya ◽  
◽  
...  
Keyword(s):  
Metal Oxide ◽  
Dynamic Range ◽  
Complementary Metal Oxide Semiconductor ◽  
Image Sensor ◽  
Low Noise ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Design Parameters ◽  
Active Pixel Sensor ◽  
Active Pixel

In this paper, our focus is on designing of complementary metal-oxide-semiconductor (CMOS) photodiode based active pixel sensor (APS) and performance analysis and achievements for CMOS image sensor. Different important design parameters like photocurrent, conversion gain, conversion factor, dynamic range, readout speed, and quantum efficiency have been calculated. Noise is also considered for the design at different phase of operations of CMOS APS. Various design parameters of our design are computed and compared with simulated results. Noise calculation shows that the pixel noise is dominated by reset noise.

Amorphous Silicon Active Pixel Sensor Readout Circuit Architectures for Medical Imaging

2002 ◽  
Vol 715 ◽  
Author(s):  
K.S. Karim ◽  
A. Nathan ◽  
J.A. Rowlands
Keyword(s):  
Amorphous Silicon ◽  
Fill Factor ◽  
Thin Film Transistor ◽  
Low Noise ◽  
Readout Circuit ◽  
Active Pixel Sensor ◽  
Continuous Layer ◽  
Active Pixel ◽  
Stability Measurements ◽  
Noise Contribution

AbstractResults from previous work indicate the feasibility of the amorphous silicon (a-Si) active pixel sensor (APS) readout circuit that performs on-pixel amplification for low-noise, real time imaging applications (e.g. fluoroscopy). In this paper, the noise contribution of the APS readout circuit is examined. In addition, due to the metastable nature of a-Si, the APS stability is discussed. Unlike conventional PPS systems with one thin film transistor (TFT) switch per pixel, the APS has three TFTs per pixel. The large number and sizes of a-Si TFTs can reduce the pixel fill factor if the TFTs are not embedded beneath the sensor as in continuous layer sensor architectures. In this paper, we present preliminary APS noise and stability measurements along with considerations of fully overlapped pixel architectures on APS performance.

Low-Noise In-Pixel Comparing Active Pixel Sensor Using Column-Level Single-Slope ADC

2008 ◽  
Vol 55 (12) ◽  
pp. 3383-3388 ◽  
Author(s):  
Dongmyung Lee ◽  
Kunhee Cho ◽  
Dongsoo Kim ◽  
Gunhee Han
Keyword(s):  
Low Noise ◽  
Active Pixel Sensor ◽  
Active Pixel

A Novel One-transistor Active Pixel Sensor with Tunable Sensitivity

2021 ◽  
pp. 1-1
Author(s):  
J. Liu ◽  
Yong-Feng Cao ◽  
Xue-Jiao Wang ◽  
Yu-Long Jiang ◽  
J. Wan
Keyword(s):  
Active Pixel Sensor ◽  
Active Pixel

High-Voltage CMOS Active Pixel Sensor

2021 ◽  
pp. 1-1
Author(s):  
Ivan Peric ◽  
Attilio Andreazza ◽  
Heiko Augustin ◽  
Marlon Barbero ◽  
Mathieu Benoit ◽  
...  
Keyword(s):  
High Voltage ◽  
Active Pixel Sensor ◽  
Active Pixel
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