DDR Volterra series behavioral model with fading memory and dynamics for high power infrastructure amplifiers

2011 ◽  
Author(s):  
Joseph Staudinger
Keyword(s):  
High Power ◽  
Volterra Series ◽  
Behavioral Model ◽  
Fading Memory ◽  
Power Infrastructure

scholarly journals Analogue Behavioral Modeling of GTO

2011 ◽  
Vol 2011 ◽  
pp. 1-11
Author(s):  
Y. Azzouz ◽  
H. Schneider ◽  
L.-A. Coyitangiye ◽  
B. Ravelo
Keyword(s):  
Real Time ◽  
High Power ◽  
Operational Amplifier ◽  
Electronic Circuit ◽  
Behavioral Model ◽  
Compact Model ◽  
Behavioral Modeling ◽  
Equivalent Circuits ◽  
Power Electronic ◽  
Turn On

An analog behavioral model of high power gate turn-off thyristor (GTO) is developed in this paper. The fundamental methodology for the modeling of this power electronic circuit is based on the use of the realistic diode consideration of non-linear junctions. This modeling technique enables to perform different simulations taking into account the turn-on and turn-off transient behaviors in real-time. The equivalent circuits were simulated with analog software developed in our laboratory. It was shown that the tested simple and compact model allows the generation of accurate physical characteristics of power thyristors under dynamic conditions. The model understudy was validated with analog simulations based on operational amplifier devices.

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