A Robust and Reliable Behavioral Model of High Power GaN HEMTS for RF Doherty Amplifier Application

2018 ◽  
Author(s):  
L. Ayari ◽  
A. Xiong ◽  
C. Maziere ◽  
Z. Ouardirhi ◽  
T. Gasseling
Keyword(s):  
High Power ◽  
Behavioral Model ◽  
Gan Hemts ◽  
Doherty Amplifier

scholarly journals Figures of merit in high-frequency and high-power GaN HEMTs

2009 ◽  
Vol 193 ◽  
pp. 012040 ◽  
Author(s):  
F A Marino ◽  
N Faralli ◽  
D K Ferry ◽  
S M Goodnick ◽  
M Saraniti
Keyword(s):  
High Power ◽  
High Frequency ◽  
Figures Of Merit ◽  
Gan Hemts

High power AlGaN/GaN HEMTs for microwave applications

1997 ◽  
Vol 41 (10) ◽  
pp. 1569-1574 ◽  
Author(s):  
Y.-F. Wu ◽  
B.P. Keller ◽  
S. Keller ◽  
D. Kapolnek ◽  
P. Kozodoy ◽  
...  
Keyword(s):  
High Power ◽  
Microwave Applications ◽  
Gan Hemts

55% PAE and High Power Ka-Band GaN HEMTs With Linearized Transconductance via $\hbox{n}+$ GaN Source Contact Ledge

2008 ◽  
Vol 29 (8) ◽  
pp. 834-837 ◽  
Author(s):  
J.S. Moon ◽  
D. Wong ◽  
M. Hu ◽  
P. Hashimoto ◽  
M. Antcliffe ◽  
...  
Keyword(s):  
High Power ◽  
Ka Band ◽  
Gan Hemts ◽  
Source Contact
Sign in / Sign up

Export Citation Format

Share Document