Modification of light scattering properties of boron doped zinc oxide grown by Low Pressure Chemical Vapour Deposition using wet chemical etching

Author(s):  
S. Calnan ◽  
C. David ◽  
A. Neumann ◽  
N. Papathanasiou ◽  
R. Schlatmann ◽  
...  
2009 ◽  
Vol 615-617 ◽  
pp. 617-620 ◽  
Author(s):  
Marcel Placidi ◽  
Marcin Zielinski ◽  
Gabriel Abadal ◽  
Josep Montserrat ◽  
Phillippe Godignon

The fabrication of freestanding SiC microstructures on Silicon-On-Insulator (SOI) and semi-insulating Silicon substrates is reported. SiC layers were grown on SOI and semi-insulating Si by chemical vapour deposition (CVD) and to avoid the instability currently obtained in SOI structures, the growth process parameters have been optimized. Isotropic wet chemical etching of the Si sacrificial layer released the electrostatic SiC microstructures patterned by dry etching. Moreover a new concept for reducing the gap between resonators and electrodes by the uses of bistable mobile electrodes is introduced.


1987 ◽  
Vol 150 (1) ◽  
pp. 69-82 ◽  
Author(s):  
D. Bielle-Daspet ◽  
F. Mansour-Bahloul ◽  
A. Martinez ◽  
B. Pieraggi ◽  
M.J. David ◽  
...  

1999 ◽  
Vol 09 (PR8) ◽  
pp. Pr8-395-Pr8-402 ◽  
Author(s):  
B. Armas ◽  
M. de Icaza Herrera ◽  
C. Combescure ◽  
F. Sibieude ◽  
D. Thenegal

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